Abstract
Co-Al-N films with different compositions were deposited by a two-facing target magnetron sputtering method for use as precursor films in the fabrication of magnetoresistive Co-AlN granular films by post-deposition annealing. It is found that the nitrogen flow ratio during sputtering deposition strongly affects the magnetic and electrical properties of Co-AlN films. In the present work, there is an optimum nitrogen flow ratio at which maximum saturation magnetizations and MR ratio (4.6%) are obtained for the annealed film. Such a film also has very high resistivity, of the order of 107 μΩ cm. Another important feature of the film is that both Co and AlN are in a crystalline state, which may confer better thermal ability compared with granular films having amorphous matrix.
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73.43.Qt; 45.70.-n; 73.63.Bd
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Li, M., Shi, J., Nakamura, Y. et al. Magnetoresistance of nanocrystalline Co-AlN films. Appl. Phys. A 89, 807–812 (2007). https://doi.org/10.1007/s00339-007-4183-6
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DOI: https://doi.org/10.1007/s00339-007-4183-6