Abstract
This paper reports on new approaches for growth control of GaN-based heterostructures for high frequency and high power application. First in situ methods are presented and their further development discussed [1]. The development leads to a greatly improved observation of growth parameter influences in the MOVPE of GaN. A new growth process is introduced which enhances growth reproducibility [2]. This new growth process is then optimized with respect to the envisaged application. To this end process modeling will be employed. The application envisaged is the AlxGa1-xN/GaN high electron mobility transistor (HEMT). At last device results will be presented. All in all it will be shown how fundamental research can drive technology and how basic knowledge can be employed for process development with respect to device applications.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
R. Steins, N. Kaluza, H. Hardtdegen, M. Zorn, K. Haberland, J.-T. Zettler, J. Cryst. Growth 272, 81 (2004)
H. Hardtdegen, N. Kaluza, R. Steins, R. Schmidt, K. Wirtz, E.V. Yakovlev, R.A. Talalaev, Y.N. Makarov, J. Cryst. Growth 272, 407 (2004)
GaN reproducibility
read for example in http://www.laytec.de
H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986)
for example A.E. Wickendon, D.D. Koleske, R.L. Henry, R.J. Gorman, M.E. Twigg, M. Fatemi, J.A. Freitas Jr., W.J. Moore, J. Electron. Mater. 29, 21 (2000)
D.C. Look, J.R. Sizelove, Phys. Rev. Lett. 35, 1380 (1999)
C.R. Kleijn, Chemical Vapor Deposition Processes, in: Computational Modelling in Semiconductor Processing, ed. by M. Meyyappan (Artech House, Boston, 1995), Chapt. 4, pp. 97–230
M.G. Jacko, S.J.M. Price, Can. J. Chem. 41, 1560 (1963)
R.A. Talalaev, E.V. Yakovlev, S.Y. Karpov, Y.N. Makarov, J. Cryst. Growth 223, 21 (2001)
H. Hardtdegen, N. Kaluza, R. Schmidt, R. Steins, E.V. Yakovlev, R.A. Talalaev, Y.N. Makarov, J.-T. Zettler, Phys. Stat. Solidi A 201, 312 (2004)
H. Hardtdegen, M. Zorn, J.-T. Zettler,Proceedings of the 12th International Workshop on the Physics of Semiconductor Devices, ed. by K.N. Bhat, A. DasGupta (Narosa Publishing House, New Delhi, 2004), pp. 83–89
T. Böttcher, E. Einfeldt, S. Figge, R. Chierchia, H. Heinke, D. Hommel, J.S. Speck, Appl. Phys. Lett. 78, 1976 (2001)
K. Haberland, A. Kaluza, M. Zorn, M. Pristovesk, H. Hardtdegen, M. Weyers, J.-T. Zettler, W. Richter, J. Cryst. Growth 240, 87 (2002)
F.G. Bobel, A. Wowchak, B. Hertl, J. Van Hove, P.P. Chow, J. Vac. Sci. Technol. B 12, 1207 (1994)
P.J. Timans, J. Appl. Phys. 72, 660 (1992)
S.R. Balmer, T. Martin, J. Cryst. Growth 48, 216 (2003)
S.R. Johnson, C. Lavoie, T. Tiedje, J.A. Mackenzie, J. Vac. Sci. Technol. B 11, 1007 (1993)
S. Liu, D. Stevenson, J. Electrochem. Soc. 125, 1161 (1978)
M. Kamp, M. Mayer, A. Pelzmann, K. Ebeling, Mater. Res. Soc. Symp. Proc. 449, 161 (1997)
R. Sheknar, K. Jensen, Surf. Sci. 321, 301 (1994)
H. Hardtdegen, N. Kaluza, R. Steins, P. Javorka, K. Wirtz, A. Alam, T. Schmitt, R. Beccard, Phys. Stat. Solidi A 202, 744 (2005)
D. Dauelsberg, H. Hardtdegen, A. Kaluza, P. Kaufmann, L. Kadinski, J. Cryst. Growth 223, 21 (2001)
H. Hardtdegen, N. Kaluza, R. Steins, Y.S. Cho, Z. Sofer, M. Zorn, K. Haberland, J.-T. Zettler, Phys. Stat. Solidi B 242, 2581 (2005)
B. Heying, X.H. Wu, S. Keller, Y. Li, D. Kaplonek, B.P. Keller, S.P. DenBaars, J.S. Speck, Appl. Phys. Lett. 68, 643 (1996)
W. Lu, V. Kumar, R. Schwindt, E. Piner, I. Adesida, Solid State Electron. 46, 1441 (2002)
Author information
Authors and Affiliations
Corresponding author
Additional information
PACS
68.35.Ct; 68.55.Ac; 78.66.Fd; 81.15.Kk
Rights and permissions
About this article
Cite this article
Hardtdegen, H., Steins, R., Kaluza, N. et al. New approaches for growth control of GaN-based HEMT structures. Appl. Phys. A 87, 491–498 (2007). https://doi.org/10.1007/s00339-007-3933-9
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-007-3933-9