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Structural characterization of shock-affected sapphire

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Abstract

The presence of dislocations has been revealed by numerical processing of high–resolution transmission electron microscopy images from the regions affected by a shock wave propagation. The shock wave was triggered by a single 220 fs duration pulse of 30 nJ at an 800 nm wavelength inside sapphire at approximately 10 μm depth. The shock-amorphised sapphire has a distinct boundary with the crystalline phase, which is not wet etchable even at a dislocation density of ≃8×1012 cm-2.

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Authors and Affiliations

  1. SUPA, School of Physics and Astronomy, University of St. Andrews, North Haugh, St. Andrews, KY16 9SS, UK

    M. Mazilu

  2. CREST-JST & Research Institute for Electronic Science, Hokkaido University, N21W10 CRIS Bldg., Sapporo, 001-0021, Japan

    S. Juodkazis & H. Misawa

  3. Ecosystem Engineering Department, The University of Tokushima, Tokushima, 770-8506, Japan

    T. Ebisui & S. Matsuo

Authors
  1. M. Mazilu
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  2. S. Juodkazis
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  3. T. Ebisui
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  4. S. Matsuo
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  5. H. Misawa
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Correspondence to H. Misawa.

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PACS

81.07.-b; 96.50.Fm; 62.50.+p; 47.40.Nm; 81.40.-z

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Mazilu, M., Juodkazis, S., Ebisui, T. et al. Structural characterization of shock-affected sapphire. Appl. Phys. A 86, 197–200 (2007). https://doi.org/10.1007/s00339-006-3732-8

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  • DOI: https://doi.org/10.1007/s00339-006-3732-8

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