Abstract
Heteroepitaxial silicon-on-sapphire (SOS) structures have been studied by high-resolution X-ray diffraction, X-ray reflectivity, electron microscopy, and electron diffraction. These methods yielded a large amount of complementary data on the defect structure of both the sapphire substrate and the silicon film, including integral and local (at the atomic-resolution level) information about the substrate, film, and sapphire-silicon interface.
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Original Russian Text © A.E. Blagov, A.L. Vasiliev, A.S. Golubeva, I.A. Ivanov, O.A. Kondratev, Yu.V. Pisarevsky, M.Yu. Presnyakov, P.A. Prosekov, A.Yu. Seregin, 2014, published in Kristallografiya, 2014, Vol. 59, No. 3, pp. 356–364.
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Blagov, A.E., Vasiliev, A.L., Golubeva, A.S. et al. Study of the structural quality of heteroepitaxial silicon-on-sapphire structures by high-resolution X-ray diffraction, X-ray reflectivity, and electron microscopy. Crystallogr. Rep. 59, 315–322 (2014). https://doi.org/10.1134/S1063774514030043
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DOI: https://doi.org/10.1134/S1063774514030043