Abstract
High-density hexagonal aluminum nitride (h-AlN) nanowires were synthesized through the direct reaction of Al with nitrogen gas without catalyst and template using a direct arc discharge method. The as-grown AlN nanowires were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. The h-AlN nanowires have a diameter in the range 20–70 nm and a length of several tens of micrometers. Vapor–solid growth mechanisms can be employed to explain the formation of the h-AlN nanowires.
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81.05.Ea; 81.10.Bk; 81.16.Dn; 68.65.-k; 81.16.-c
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Shen, L., Li, X., Zhang, J. et al. Synthesis of single-crystalline wurtzite aluminum nitride nanowires by direct arc discharge. Appl. Phys. A 84, 73–75 (2006). https://doi.org/10.1007/s00339-006-3580-6
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DOI: https://doi.org/10.1007/s00339-006-3580-6