Abstract
Oxygen-free C60 films on various substrates have been used as negative resist in X-ray lithography, yielding pure-carbon microstructures of good quality via synchrotron irradiation through an X-ray mask and subsequent development. While X-ray s induce the polymerization of C60 into insoluble product, large numbers of secondary electrons backscattered from the substrate inhibit this, which we attribute to the different cross sections of X-ray s and electrons in C60. Both electrons and X-ray s generate neutral electronically excited C60 molecules. At a low density of excited C60, as generated by X-ray s, they react predominantly with neighbouring molecules in their ground state via a 2+2-cycloaddition similar to UV polymerization. At a high density of excited C60, as generated by secondary electrons, the excited molecules are not able to react with each other due to orbital symmetry. Instead, the excited states quench each other, thus inhibiting the polymerization. The reduction of the resolution in the C60 pattern, and the inhibition of the polymerization near the interface through backscattered electrons, can be reduced by using substrate materials from which only few electrons emerge. To maintain the density of excited C60 molecules at the interface below the point where the quenching reaction prevails, low synchrotron-radiation intensities are recommended.
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81.05.Tp; 82.50.-m; 85.40.Hp
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Klesper, H., Baumann, R., Bargon, J. et al. Investigations on the behaviour of C60 as a resist in X-ray lithography. Appl. Phys. A 80, 1469–1479 (2005). https://doi.org/10.1007/s00339-004-3139-3
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DOI: https://doi.org/10.1007/s00339-004-3139-3