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Morphology and microstructure of all-epitaxial ferroelectric tri-layered (Bi,La)4Ti3O12/Pb(Zr0.4Ti0.6)O3/ (Bi,La)4Ti3O12 thin films on SrTiO3(011)

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Abstract

The morphology and microstructure of all-epitaxial (Bi,La)4Ti3O12/Pb(Zr0.4Ti0.6)O3/(Bi,La)4Ti3O12 (BLT/PZT/BLT) tri-layered ferroelectric films, grown on (011)-oriented SrTiO3 (STO) substrates by pulsed laser deposition, are investigated by transmission electron microscopy (TEM). X-ray diffraction and electron diffraction patterns demonstrate that the epitaxial relationship between BLT, PZT and STO can be described as \({\rm (118)_{BLT}//(011)_{PZT}//(011)_{STO}}\) ; \({\rm [\overline{1}\,\overline{1}\,0]_{BLT}//[1\,0\,0]_{PZT}//[1\,0\,0]_{STO}}\) . Cross-sectional TEM images show that the growth rate of BLT is nearly two times that for PZT at the same growth conditions, and 90° ferroelectric domain boundaries lying on {110} planes are observed in the PZT layer. The 90° ferroelectric domains in the PZT layer extend up to 600 nm in length. Long domains penetrate into the neighboring columnar grain through the columnar grain boundary, whereas others are nucleating at the columnar grain boundaries. The roughness of the PZT/BLT interfaces appears to depend on the viewing direction, i.e., it is different for different azimuthal directions. Planar TEM investigations show that the grains in the top BLT layer have a rod-like morphology, preferentially growing along the [110]BLT direction. The grain width is rather constant at about 90 nm, whereas the length of the grains varies from 150 to 625 nm. These morphological details point to the important role the crystal anisotropy of BLT plays for the growth and structure of the tri-layered films.

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Correspondence to X.H. Zhu.

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81.15-z; 68.37.Lp; 77.84.-s

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Zhu, X., Bao, D., Alexe, M. et al. Morphology and microstructure of all-epitaxial ferroelectric tri-layered (Bi,La)4Ti3O12/Pb(Zr0.4Ti0.6)O3/ (Bi,La)4Ti3O12 thin films on SrTiO3(011). Appl. Phys. A 80, 739–742 (2005). https://doi.org/10.1007/s00339-004-3111-2

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  • DOI: https://doi.org/10.1007/s00339-004-3111-2

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