Abstract
(Bi,Nd)4Ti3O12 (BNT) ferroelectric films were deposited on Pt/Ti/SiO2/Si substrates by chemical solution deposition and crystallized in an N2 environment after pre-annealing in air at 500 °C. The effect of crystalline temperature on the structural and electrical properties of the BNT films was studied. The BNT films annealed in N2 in the temperature range of 630 °C to 670 °C were crystallized well and the average grain size increased with increasing crystalline temperature, while the remanent polarization and dielectric constant of the films are not a monotonic function of the crystalline temperature. The BNT films crystallized at 650 °C have the largest remanent polarization value of 2Pr=63.6 μC/cm2, a dielectric constant of 344 at 10 kHz, and a fatigue-free characteristic. A positive correlation between the remanent polarization and the dielectric constant of the BNT films has been observed.
Similar content being viewed by others
References
B.H. Park, B.S. Kang, S.D. Bu, T.W. Noh, J. Lee, W. Jo: Nature 401, 682 (1999)
U. Chon, K.B. Kim, H.M. Jang, G.C. Yi: Appl. Phys. Lett. 79, 3137 (2001)
Y.M. Sun, Y.C. Chen, J.Y. Gan, J.C. Hwang: Appl. Phys. Lett. 81, 3221 (2002)
T. Watanabe, T. Kojima, T. Sakai, H. Funakubo, M. Osada, Y. Noguchi, M. Miyayama: J. Appl. Phys. 92, 1518 (2002)
D. Wu, A.D. Li, T. Zhu, Z.G. Liu, N.B. Ming: J. Appl. Phys. 88, 5941 (2000)
U. Chon, H.M. Jang, M.G. Kim, C.H. Chang: Phys. Rev. Lett. 89, 087601 (2002)
T. Kojima, T. Sakai, T. Watanabe, H. Funakubo, K. Saito, M. Osada: Appl. Phys. Lett. 80, 2746 (2002)
H. Uchida, H. Yoshikawa, I. Okada, H. Matsuda, T. Iijima, T. Watanabe, T. Kojima, H. Funakubo: Appl. Phys. Lett. 81, 2229 (2002)
H. Maiwa, N. Iizawa, D. Togawa, T. Hayashi, W. Sakamoto, M. Yamada, S. Hirano: Appl. Phys. Lett. 82, 1760 (2003)
X.F. Du, I.W. Chen: J. Am. Ceram. Soc. 81, 3253 (1998)
N. Ogata, M. Nagata: Jpn. J. Appl. Phys. 40, 2403 (2001)
H.J. Cho, W. Jo, T.W. Noh: Appl. Phys. Lett. 65, 1525 (1994)
S.J. Yeom, W.S. Yang, N.K. Kim, S.Y. Kweon, E.S. Choi, J.S. Roh: Jpn. J. Appl. Phys. 42, L182 (2003)
S.O. Ryu, W.J. Lee, W.C. Lee, W.C. Shin, I.K. You, S.M. Cho, S.M. Yoon, B.G. Yu, J.K. Koo, J.D. Kim: Jpn. J. Appl. Phys. 42, 1665 (2003)
H. Uchida, H. Yshikawa, I. Okada, H. Matsuda, T. Iijima, T. Watanabe, T. Kojima, H. Funakubo: Appl. Phys. Lett. 81, 2229 (2002)
Y.M. Sun, Y.C. Chen, J.Y. Gan, J.C. Hwang: Appl. Phys. Lett. 81, 3221 (2002)
D.H. Bao, T.W. Chiu, N. Wakiya, K. Shinozaki, N. Mizutani: J. Appl. Phys. 93, 497 (2003)
Author information
Authors and Affiliations
Corresponding author
Additional information
PACS
81.20.Fw; 81.40.Ef; 77.84.-s
Rights and permissions
About this article
Cite this article
Hou, F., Shen, M. Crystallization of (Bi,Nd)4Ti3O12 films in N2 environment by chemical solution deposition. Appl. Phys. A 81, 1249–1252 (2005). https://doi.org/10.1007/s00339-004-2979-1
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-004-2979-1