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Effects of Mn-doping on the electrical and the ferroelectric properties of Bi6Fe2Ti3O18 thin films prepared by using chemical solution deposition

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Abstract

Mn-doped Bi6Fe2Ti3O18 (Bi6Fe2-x Mn x Ti3O18, x = 0.0, 0.5, 1.0 and 1.5, represented as BFMTO00, BFMTO05, BFMTO10 and BFMTO15, respectively) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Among the thin films, the BFMTO05 thin film exhibited superior electrical and ferroelectric properties. The values of the remnant polarization (2P r ) and the coercive field (2E c ) of the BFMTO05 thin film were 22μC/cm2 and 207 kV/cm at an electric field of 530 kV/cm, respectively. The leakage current density of the BFMTO05 thin film was 5.45 × 10−6 A/cm2 at an electric field of 100 kV/cm. The dielectric constant for the BFMTO05 thin film was 467 at a frequency of 1 kHz. Our work confirms that the enhanced electrical and ferroelectric properties may be related to a decrease in the oxygen vacancy density, a stabilization of the perovskite structure and small changes in the lattice parameter caused by doping of Mn3+ ions into the Fe3+ ion sites.

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References

  1. C. A-Paz de Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott and J. F. Scott, Nature 374, 627 (1995).

    Article  ADS  Google Scholar 

  2. T. Watanabe and H. Funakubo, J. Appl. Phys. 100, 051602 (2006).

  3. S. E. Cummins and L. E. Cross, J. Appl. Phys. 39, 2268 (1968).

    Article  ADS  Google Scholar 

  4. H. Irie and M. Miyayama, Appl. Phys. Lett. 79, 251 (2001).

    Article  ADS  Google Scholar 

  5. B. H. Park, S. J. Hyun, S. D. Bu, T. W. Noh, J. Lee, H-D. Kim, T. H. Kim and W. Jo, Appl. Phys. Lett. 74, 1907 (1999).

    Article  ADS  Google Scholar 

  6. J. Yang, W. Tong, Z. Liu, X. B. Zhu, J. M. Dai, W. H. Song, Z. R. Yang and Y. P. Sun, Phys. Rev. B 86, 104410 (2012).

    Article  ADS  Google Scholar 

  7. J. Yang, L. H. Yin, Z. Liu, X. B. Zhu, W. H. Song, J. M. Dai, Z. R. Yang and Y. P. Sun, Appl. Phys. Lett. 101, 012402 (2012).

  8. J-B. Li, Y. P. Huang, G. H. Rao, G. Y. Liu, J. Luo, J. R. Chen and J. K. Liang, Appl. Phys. Lett. 96, 222903 (2010).

    Article  ADS  Google Scholar 

  9. R. Ramesh, Thin Film Ferroelectric Materials and Devices, edited by R. Ramesh (Kluwer Academic, Dordrecht, 1997).

  10. Y. Y. Yao, C. H. Song, P. Bao, D. Su, X. M. Lu, J. S. Zhu and Y. N. Wang, J. Appl. Phys. 95, 3126 (2004).

    Article  ADS  Google Scholar 

  11. R. R. Das, P. Bhattacharya, W. Perez and R. S. Katiyar, Ceram. Int. 30, 1175 (2004).

    Article  Google Scholar 

  12. S. Kojima, R. Imaizumi, S. Hamazaki and M. Takashige, J. Mol. Struct. 348, 37 (1995).

    Article  ADS  Google Scholar 

  13. J. Liu, Z. Zou and Y. Jin, J. Phys. Chem. Solids 57, 1653 (1996).

    Article  ADS  Google Scholar 

  14. J. Zhu, X-B. Chen, J-H. He and J-C. Shen, Phys. Lett. A 362, 471 (2007).

    Article  ADS  Google Scholar 

  15. G. Kartopu, A. Lahmar, S. Habouti, C-L. Solterbeck, B. Elouadi and M. Es-Souni, Appl. Phys. Lett. 92, 151910 (2008).

    Article  ADS  Google Scholar 

  16. S. Habouti, C-H. Solterbeck and M. Es-Souni, J. Appl. Phys. 102, 074107 (2007).

  17. A. Lahmar, S. Habouti, M. Dietze, C-H. Solterbeck and M. Es-Souni, Appl. Phys. Lett. 94, 012903 (2009).

  18. B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee and W. Jo, Nature 401, 682 (1999).

    Article  ADS  Google Scholar 

  19. H. Sun, J. Zhu, H. Fang and X-B. Chen, J. Appl. Phys. 100, 074102 (2006).

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Authors and Affiliations

  1. Department of Physics, Changwon National University, Changwon, 641-773, Korea

    J. W. Kim, C. M. Raghavan, J. Y. Choi, W-J. Kim & S. S. Kim

  2. School of Nano and Advanced Materials Engineering, Changwon National University, Changwon, 641-773, Korea

    T. K. Song

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  1. J. W. Kim
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  2. C. M. Raghavan
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  3. J. Y. Choi
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  4. W-J. Kim
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  5. S. S. Kim
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  6. T. K. Song
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Correspondence to S. S. Kim.

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Kim, J.W., Raghavan, C.M., Choi, J.Y. et al. Effects of Mn-doping on the electrical and the ferroelectric properties of Bi6Fe2Ti3O18 thin films prepared by using chemical solution deposition. Journal of the Korean Physical Society 66, 1344–1349 (2015). https://doi.org/10.3938/jkps.66.1344

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  • DOI: https://doi.org/10.3938/jkps.66.1344

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