Abstract
Amorphous SixC1-x thin films have been grown by low-pressure chemical vapour deposition at 800 K from Si2H6 and C2H2 in the x concentration range 0.5≤x<0.7. Measurements of the valence-band and core-level photoemission spectra using X-ray photoemission spectroscopy and synchrotron radiation have shown a clear change in the electronic structure for 0.55<x<0.60, where the films appear to lose their predominant SiC character and acquire an increasing Si-like signature in the spectra. X-ray diffraction data on polycrystalline SixC1-x films obtained by excimer laser annealing during growth have shown the formation of a dominant 3C-SiC phase up to x=0.6, while for higher x the growth of a poly-Si phase has been observed .
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81.15.Gh; 79.60.Dp
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Santoni, A., Lancok, J., Dhanak, V. et al. A valence-band and core-level photoemission study of a-SixC1-x thin films grown by low-temperature low-pressure chemical vapour deposition. Appl. Phys. A 81, 991–996 (2005). https://doi.org/10.1007/s00339-004-2976-4
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DOI: https://doi.org/10.1007/s00339-004-2976-4