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An investigation of distribution parameters for fluorine ion implantation in indium-tin-oxide films

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Abstract

Implanted-fluorine profiles in ITO films have been accurately measured using the 19F(p,αγ)16O resonance nuclear reaction at ER=872.1 keV, with width Γ=4.2 keV. A proper deconvolution calculation method was used to extract the true distribution of fluorine from the experimental excitation yield curves. The experimental range distribution parameters, Rp and ΔRp, were compared with those obtained from Monte Carlo simulation codes.

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Authors and Affiliations

  1. Department of Physics, Shandong University, Jinan, Shandong, 250100, China

    X. Liu, Y. Xia, F. Li, B. Huang, M. Zhao & L. Ye

  2. School of Electrical Engineering, Shandong University, Jinan, Shandong, 250100, China

    Z. Tan

  3. Institute of Crystal Materials and State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong, 250100, China

    X. Xu

Authors
  1. X. Liu
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  2. Y. Xia
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  3. F. Li
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  4. Z. Tan
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  5. B. Huang
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  6. M. Zhao
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  7. L. Ye
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  8. X. Xu
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Correspondence to X. Liu.

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PACS

61.72.Ww; 68.55.Ln

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Liu, X., Xia, Y., Li, F. et al. An investigation of distribution parameters for fluorine ion implantation in indium-tin-oxide films. Appl. Phys. A 81, 635–638 (2005). https://doi.org/10.1007/s00339-004-2670-6

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  • DOI: https://doi.org/10.1007/s00339-004-2670-6

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