Abstract
A modified thermal evaporation processing is reported to fabricate silicon nanowires starting from Si powder under normal pressure. In a temperature range of 1250–1290 °C, long single-crystal Si nanowires with an amorphous layer were grown in relative large quantity, and they had a millimeter-scale length and a uniform diameter of about 100 nm. A high-resolution transmission electron microscopy image indicated that the growing direction of the long Si nanowires is [111].
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81.07.Bc
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Shi, Y., Hu, Q., Araki, H. et al. Long Si nanowires with millimeter-scale length by modified thermal evaporation from Si powder. Appl. Phys. A 80, 1733–1736 (2005). https://doi.org/10.1007/s00339-003-2469-x
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DOI: https://doi.org/10.1007/s00339-003-2469-x