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Ferroelectric characteristics of silicate-bound Bi4Ti3O12 thin films

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Abstract

40-nm-thick Bi4Ti3O12 films have been deposited by spin coating with a hybrid precursor solution of bismuth-2-ethylhexanoate, titanium tetraisopropoxide and tetraethysilicate. The 500 °C-annealed thin film consists of Bi4Ti3O12 grains bound by ultra-thin amorphous silicate layers. The film shows a high degree of crystallinity with random orientation and exhibits a structure-dependent propeller-like P–V hysteresis loop. The ultra-thin layer of amorphous silicate is found to have multiple functions of binder, compositional buffer and insulator, which results in an improvement of the electrical properties of the Bi4Ti3O12-Bi2O3×SiO2 thin films.

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Authors and Affiliations

  1. National Institute of Advanced Industrial Science and Technology, 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya, 463-8560, Japan

    K. Kato, K. Suzuki, K. Tanaka, D. Fu, K. Nishizawa & T. Miki

  2. Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda-cho, Midori-ku, Yokohama, 226-8503, Japan

    K. Kato & H. Ishiwara

Authors
  1. K. Kato
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  2. K. Suzuki
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  3. K. Tanaka
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  4. D. Fu
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  5. K. Nishizawa
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  6. T. Miki
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  7. H. Ishiwara
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Correspondence to K. Kato.

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PACS

77.84.-s; 68.37.-d; 81.15.-z

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Kato, K., Suzuki, K., Tanaka, K. et al. Ferroelectric characteristics of silicate-bound Bi4Ti3O12 thin films. Appl. Phys. A 80, 271–273 (2005). https://doi.org/10.1007/s00339-003-2457-1

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  • DOI: https://doi.org/10.1007/s00339-003-2457-1

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