Abstract
We have measured structural and optical properties for nanocrystalline silicon thin films deposited by rf-magnetron sputtering and characterized the microstructure of the films with the methods of scanning electron microscopy, X-ray diffraction, and Raman scattering. The measurements suggest that the level of reactive gases, leaving residue gas molecules that remain inactive for the crystal growth, affect the formation of nanocrystals. They also identify the columns microstructually appeared in the nanocrystalline silicon to the amorphous networks.
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References
D.L. Staebler, C.R. Wronski: Appl. Phys. Lett. 31, 292 (1977)
N.H. Nickel, W.B. Jackson, N.M. Johnson: Phys. Rev. Lett. 71, 2733 (1993)
N.H. Nickel, M. Rakel: Mater. Res. Soc. Proc. 664 (San Francisco, CA, 2001) A28.3.1.
I. Ferreira, H. Aguas, L. Mendes, F. Fernandes, E. Fortunato, R. Martins: Mat. Rees. Soc. Symp. Proc. 507, 607 (1998)
S. Chattopadhyay, D. Das, S.N. Sharma, A.K. Barua, R. Banerjee, S. Sshirsagar: Jpn. Appl. Phys. 44, 5743 (1995)
J.E. Gerbi, J.R. Abelson, Mat. Res. Soc. Symp. Proc. 609 A5.3.1 (2000).
A. Heya, A. Masuda, H. Matsumura: Appl. Phys. Lett. 74, 2143 (1999)
H. Kakinuma, M. Morhi, T. Tsuroka: J. Appl. Phys. 77, 646 (1995)
I. Kaiser, W. Fuhs, N.H. Nickel, W. Pilz: Phys. Rev. B 58, 1718 (1998)
Y. Okada, J. Chen, I.H. Campbell, P.M. Fauchet, S. Wagner: J. Appl. Phys. 67, 1757 (1989)
G.X. Chen, H. Xia, K.J. Chen, W. Zhang, X.K. Zhang: Phys. Status Solidi A118, K51 (1990).
M. Kondo, M. Fukawa, L. Guo, A. Matsuda: J. Non-Cryst. Solids 266–269, 84 (2000)
A. Sutoh, Y. Okada, S. Ohta, M. Kawabe: Jpn. J. Appl. Phys. 34, L1379 (1995)
W. Paul, D.A. Anderson: Solar Energy Mater. 3, 229 (1981)
K. Yamamoto, T. Itoh, K. Ushikoshi, S. Nonomura, S. Nitta: Mat. Res. Soc. Symp. Proc. 557, 317 (1999)
J. Gonzalez-Hernandez, G.H. Azarbayejani, R. Tsu, F.H. Pollak: Appl. Phys. Lett. 47, 1350 (1985)
B. Goldstein, C.R. Dickson, I.H. Campbell, P.M. Fauchet: Appl. Phys. Lett. 53, 2672 (1988)
Z. Iqbal, S. Vepfek, a. P. Webb, P. Capezzuto: Solid State Commun. 37, 993 (1981)
N. Yoshida, T. Itoh, H. Inouchi, H. Harada, K. Inagaki, N. Yamana, K. Yamamoto, S. Nonomura, S. Nitta: Mat. Res. Soc. Symp. Proc. 609, A19.3.1 (2000).
E.W. Forsythe, E.A. Whittaker, F.H. Pollak, B.S. Sywe, G.S. Tompa, B.A. Khan, J. Khurgin, H.W.H. Lee, F. Adar, H. Schaffer: Mat. Res. Soc. Symp. Proc. 358, 187 (1995)
P.M. Fauchet, I.H. Campbell, F. Adar: Appl. Phys. Lett. 47, 479 (1985)
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78.30.Am; 78.67.Bf; 81.07.Bc
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Kim, W., Lee, J., Lee, J. et al. Structural changes in nanocrystalline silicon deposited by rf-magnetron sputtering. Appl Phys A 79, 1813–1817 (2004). https://doi.org/10.1007/s00339-003-2178-5
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DOI: https://doi.org/10.1007/s00339-003-2178-5