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Hydrogen-enhanced recrystallization in N+-implanted GaAs

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Abstract

The hydrogen-enhanced recrystallization during thermal annealing in N+-implanted GaAs has been studied by combinatorial implantation process. Raman spectroscopy was used to study the crystallization properties of a set of hydrogenated cells on the N+-implanted GaAs wafer. A whole competitive process between H+ implantation-induced damage and recovery in the regrowth process of amorphous GaAs was observed within the proton dose region of 1.6×1015 to 1.1×1017 cm-2. In H+ dose region of 2.1×1016 to 5.4×1016 cm-2, H-enhanced recovery of crystal dominates the regrowth process. The crystal quality is better than that of unhydrogenated cell of N+-implanted GaAs in the H+ dose range from 4.7×1016 to 8.1×1016 cm-2. It is suggested that the vacancy supersaturation produced during hydrogen irradiation is dominantly responsible for the enhancement of thermal regrowth in the N+-implanted GaAs. Both the crystallization and amorphization process are clearly observed in different proton implantation dose regions.

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Authors and Affiliations

  1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P.R. China

    J. Wang, Z. Li, W. Xu, X. Guo, W. Cai, Q. Wang, X. Chen & W. Lu

  2. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf e.V., 510119, 01314, Dresden, Germany

    J. Wang

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  1. J. Wang
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  2. Z. Li
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  3. W. Xu
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  4. X. Guo
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  5. W. Cai
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  6. Q. Wang
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  7. X. Chen
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  8. W. Lu
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Correspondence to W. Lu.

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PACS

61.72.Vv; 63.20.Dj; 81.05.Ea

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Wang, J., Li, Z., Xu, W. et al. Hydrogen-enhanced recrystallization in N+-implanted GaAs. Appl Phys A 79, 1809–1811 (2004). https://doi.org/10.1007/s00339-003-2173-x

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  • DOI: https://doi.org/10.1007/s00339-003-2173-x

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