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Influence of the substrate temperature during deposition on film characteristics of copper phthalocyanine and field-effect transistor properties

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Abstract

In this paper, we employ different substrate temperatures during the deposition process and observe a highly ordered structure and strong orientation of copper phthalocyanine (CuPc) molecules on Si/SiO2 by using X-ray-diffraction and transmission electron microscopy analysis. The results show the effect of CuPc morphology at different substrate temperatures on the organic field-effect-transistor performance. When the substrate temperature for deposition of CuPc is 120 °C, a mobility of 3.75×10-3 cm2/V s can be obtained.

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Authors and Affiliations

  1. Center for Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, 100080, Beijing, P.R. China

    K. Xiao, Y. Liu, G. Yu & D. Zhu

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  1. K. Xiao
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  2. Y. Liu
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  3. G. Yu
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  4. D. Zhu
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Correspondence to Y. Liu.

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PACS

73.61.Ph; 85.30.Tv; 78.66.Tr

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Xiao, K., Liu, Y., Yu, G. et al. Influence of the substrate temperature during deposition on film characteristics of copper phthalocyanine and field-effect transistor properties. Appl Phys A 77, 367–370 (2003). https://doi.org/10.1007/s00339-003-2169-6

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  • DOI: https://doi.org/10.1007/s00339-003-2169-6

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