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Magnetic properties of silicon doped with gadolinium

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Abstract

The magnetic semiconductor GdxSi1-x was prepared by low-energy dual ion-beam epitaxy. GdxSi1-x shows excellent magnetic properties at room temperature. A high magnetic moment of 10 μB per Gd atom is observed. The high atomic magnetic moment is interpreted as being a result of the RKKY mechanism. The indirect exchange interaction between ions is strong at large distances due to the low state density of the carriers in the magnetic semiconductor.

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Authors and Affiliations

  1. Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, P.R. China

    J.P. Zhou, N.F. Chen, S.L. Song, C.L. Chai, S.Y. Yang, Z.K. Liu & L.Y. Lin

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  1. J.P. Zhou
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  2. N.F. Chen
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  3. S.L. Song
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  4. C.L. Chai
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  5. S.Y. Yang
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  6. Z.K. Liu
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  7. L.Y. Lin
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Corresponding author

Correspondence to J.P. Zhou.

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PACS

81.05.Zx; 81.15.Hi; 75.50.Pp; 75.70.-i; 61.72.Tt

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Zhou, J., Chen, N., Song, S. et al. Magnetic properties of silicon doped with gadolinium. Appl Phys A 77, 599–602 (2003). https://doi.org/10.1007/s00339-002-2000-9

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  • DOI: https://doi.org/10.1007/s00339-002-2000-9

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