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Electronic and Magnetic Properties of Doped Silicon Carbide Nanosheet Under an External Electric Field

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Abstract

The electronic and magnetic properties of silicon carbide nanosheets were investigated in this study, with particular attention given to the effects of doping with transition metal atoms and applying an external electric field. Our findings point out that introducing dopants, such as Mn, Co, and Zn, can notably reduce the band gap of the pristine structure from 2.6 eV to 0.752 eV, 0.261 eV, and 0.898 eV, respectively. Moreover, the inclusion of Mn and Co dopants results in magnetization. On the other hand, applying a transverse external electric field up to 7 V/nm leads to a semiconductor-to-metal phase transition. Although the applied electric field has a minor effect on the Mn-doped structure’s magnetic moment, it slightly decreases the magnetic moment of the magnetized Co-doped one.

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  1. Department of Physics, Al al-Bayt University, Al-Mafraq, 130040, Jordan

    Mohammad A. Salem, Jamal A. Talla & Alaa L. Al-Moumani

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  1. Mohammad A. Salem
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The study conception and design was contributed by all authors. Material preparation, data collection, and analysis were carried out by MS, JT and AA. The first draft of the manuscript was written by JT and MS, and all authors provided comments on previous versions of the manuscript. The final manuscript was reviewed and approved by all authors.

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Correspondence to Jamal A. Talla.

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Salem, M.A., Talla, J.A. & Al-Moumani, A.L. Electronic and Magnetic Properties of Doped Silicon Carbide Nanosheet Under an External Electric Field. Int J Theor Phys 62, 137 (2023). https://doi.org/10.1007/s10773-023-05415-8

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