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Effects of LaNiO3 on the structures and properties of SrBi2Ta2O9 thin films

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Abstract

SrBi2Ta2O9(SBT)/LaNiO3(LNO)/Si and SBT/Pt/TiO2/SiO2/Si multilayers were fabricated by pulsed laser deposition. With Pt top electrodes, the measured remanent polarization (2Pr) of Pt/SBT/LNO/Si and Pt/SBT/Pt/TiO2/SiO2/Si capacitors was 6.5 μC/cm2 and 5.2 μC/cm2, respectively. Using LNO as both bottom electrodes and buffer layers, enhanced non-c-axis crystalline SBT films were induced, which resulted in a 2Pr greater than that of the Pt/SBT/Pt/TiO2/SiO2/Si capacitor. The hysteresis loop of the Pt/SBT/LNO/Si capacitor showed a great external-field-dependent horizontal shift. Using an electron-injection model, this dependence was addressed. The fatigue-free property of the Pt/SBT/LNO/Si capacitor was experimentally established, in that the non-volatile polarization decreased by less than 5% of the initial value after 1.44×109 switching cycles .

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Authors and Affiliations

  1. National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, 210093, Nanjing, P.R. China

    S.T. Zhang, Y.F. Chen, Z.G. Liu & N.B. Ming

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  1. S.T. Zhang
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  2. Y.F. Chen
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  3. Z.G. Liu
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  4. N.B. Ming
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Correspondence to S.T. Zhang.

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PACS

77.84.Dy; 68.65.+g

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Zhang, S., Chen, Y., Liu, Z. et al. Effects of LaNiO3 on the structures and properties of SrBi2Ta2O9 thin films. Appl. Phys. A 78, 363–367 (2004). https://doi.org/10.1007/s00339-002-1913-7

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  • DOI: https://doi.org/10.1007/s00339-002-1913-7

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