Skip to main content
SpringerLink
Log in

Nickel in silicon studied by electron paramagnetic resonance

  • Regular Paper
  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

We have investigated nickel in silicon samples with a wide range of initial doping concentrations by EPR, DLTS and photo-EPR techniques. Our results show that the two different Ni-centers which were observed previously by EPR, but whose structure could not be interpreted unambiguously, are both associated with Ni in a substitutional position. They are distinguished by their charges and by slightly different displacements from the ideal substitutional site. A model for the Ni+ s-center is suggested which explains the symmetry of this center.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. K. Graff: Metal Impurities in Silicon-Device Fabrication (Springer, Berlin, Heidelberg 1995)

  2. E.R. Weber: Appl. Phys. A 30, 1 (1983)

  3. M. Seibt, W. Schröter: Philos. Mag. A 59, 337 (1989)

  4. H. Lemke: Phys. Status Solidi (a) 99, 205 (1987)

  5. H. Kitagawa, H. Nakashima: Phys. Status Solidi (a) 99, K49 (1989)

  6. Sh. Tanaka, K. Matsushita, H. Kitagawa: Jpn. J. Appl. Phys. 35, 4626 (1996)

  7. A.A. Istratow, E.R. Weber: Appl. Phys. A 66, 123 (1998)

  8. L.S. Vlasenko, A.A. Lebedev, E.S. Taptygov, V.A. Khramtsov: Sov. Techn. Phys. Lett. 13, 553 (1987)

  9. L.S. Vlasenko, N.T. Son, A.B. van Oosten, C.A.J. Ammerlaan, A.A. Lebedev, E.S. Taptygov, V.A. Khramtsov: Solid State Communications 73, 393 (1990)

  10. N.T. Son, A.A. van Oosten, C.A.J. Ammerlaan: Solid State Commun. 80, 439 (1991)

  11. G.D. Watkins: Physica B 117 & 118, 9 (1983)

  12. F.G. Anderson, F.S. Ham, G.D. Watkins: Phys. Rev. B 45, 3287 (1992)

  13. G.D. Watkins, P.M. Williams: Phys. Rev. B 52, 16575 (1995)

  14. C.A.J. Ammerlaan, A.B. van Oosten: Phys. Scr., T. 25, 342 (1989)

  15. G.W. Ludwig, H.H. Woodbury: Solid State Phys. 13, 269 (1962)

  16. C.A.J. Ammerlaan: In Semiconductors, ed. by O. Madelung, M. Schulz, Landolt-Börnstein, New Series, Group III, Vol. 22b (Springer, Berlin 1989) p. 375

  17. F. Beeler, O.K. Anderson, H. Scheffler: Phys. Rev. B 41, 1603 (1990)

  18. G. Lucovsky: Solid State Commun. 3, 299 (1965)

  19. M.G. Grimmeiss, L.A. Ledebo: J. Phys. C 8, 2155 (1975)

  20. F. Riedel, W. Schröter: Phys. Rev. B 62 , 7150 (2000)

  21. B. Effey: Diplomawork, Clausthal (1995)

  22. W. Schröter, M. Seibt, D. Gilles: In Electronic Structure and Properties of Semiconductors ed. by W. Schröter, Vol. 4 of the series Material Science and Technology, ed. by R.W. Cahn, P. Haasen, E.J. Kramer (VCH, Weinheim 1991) p. 555

  23. D. Gilles, W. Schröter, W. Bergholz: Phys. Rev. B 41, 5770 (1990)

  24. F.G. Anderson, R.F. Milligan, G.D. Watkins: Phys. Rev. B 45, 3275 (1992)

  25. G.D. Watkins: In Deep Centers in Semiconductors ed. by S.T. Pantelides (Gordon and Breach, New York 1986) p. 147

  26. B. Beach Nielson, P. Johannesen, P. Stellinga, K. Bonde Nielsen, J.R. Byberg: Phys. Rev. Lett. 79, 1507 (1997)

  27. G.D. Watkins, J.W. Corbett: Phys. Rev. A 134, 1359 (1964)

Download references

Author information

Authors and Affiliations

  1. Technical University of Clausthal , Institute for Applied Physics, 38678, Clausthal-Zellerfeld, Germany

    B. Effey-Schwickert, M. Wiegand, H. Vollmer & R. Labusch

  2. Dept. of Physics, University of Natal at Durban, 4041, Durban, South Africa

    B. Effey-Schwickert, M. Wiegand, H. Vollmer & R. Labusch

Authors
  1. B. Effey-Schwickert
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. Wiegand
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. H. Vollmer
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. R. Labusch
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to H. Vollmer.

Additional information

PACS

71.55.Cn; 76.30.Fc

Rights and permissions

Reprints and permissions

About this article

Cite this article

Effey-Schwickert, B., Wiegand, M., Vollmer, H. et al. Nickel in silicon studied by electron paramagnetic resonance. Appl. Phys. A 77, 711–716 (2003). https://doi.org/10.1007/s00339-002-1891-9

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00339-002-1891-9

Keywords

Search

Navigation