Abstract
Aluminium nitride (AlN) thin films have been grown on Si(100), Si(111) and Sapphire Al2O3(001) substrates by pulsed KrF excimer laser (wavelength 248 nm, duration 30 ns) ablation of an AlN target with the assistance of nitrogen-ion-beam bombardment. The influence of process parameters such as substrate temperature and ion-beam energy has been investigated in order to obtain high-quality AlN films. The AlN films deposited by pulsed-laser deposition (PLD) have been characterized by X-ray diffraction (XRD) to determine the crystalline quality, grain size and growth orientation with respect to the substrate. The XRD spectra of AlN films on Si(100), Si(111) and Sapphire substrates yield full-width-half-maximum (FWHM) values of approximately 1.6. The bonding characteristics in the films have been evaluated by Raman spectroscopy. The chemical composition of the films has been characterized by X-ray photoelectron spectroscopy (XPS). The surface morphology of the films has been measured by atomic force microscopy (AFM). At a substrate temperature of at least 600 °C, polycrystalline AlN films with orientations of AlN(100) and AlN(101) have been synthesized.
Similar content being viewed by others
References
H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, M. Burns: J. Appl. Phys. 76, 1363 (1994)
M.T. Wauk, D.K. Winslow: Appl. Phys. Lett. 13, 286 (1968)
R.F. Davis: Proc. IEEE 79, 702 (1991)
H. Morkoc, S. Strite: J. Vac. Sci. Technol. B 10, 1237 (1992)
M. Akiyama, K. Konaka, K. Shobu, T. Watanabe: J. Ceram. Soc. Jpn. 103, 974 (1995)
K. Jagannadham, A.K. Sharma, Q. Wei, R. Kalyanraman, J. Narayan: J. Vac. Sci. Tech. A 16, 2804 (1998)
S. Nakamura, T. Mukai, M. Senoh: Appl. Phys. Lett. 64, 1687 (1994)
P. Kung, A. Saxler, X. Zhang, D. Walker, T.C. Wang, I. Furguson, M. Razeghi: Appl. Phys. Lett. 66, 2958 (1995)
K.S. Stevens, A. Ohtani, M. Kinniburgh, R. Beresford: Appl. Phys. Lett. 65, 321 (1994)
G.W. Auner, F. Jin, V.M. Naik, R. Naik: J. Appl. Phys. 85, 7879 (1999)
J.R. Heffelfinger, D.L. Medlin, K.F. McCarty: J. Appl. Phys. 85, 466 (1999)
H. Okana, N. Tanaka, K. Shibata, S. Nakano: Jpn. J. Appl. Phys. 33, 2957 (1994)
Y. Watanabe, Y. Nakamura: Ceram. Int. 24, 427 (1998)
J.H. Edgar, D.T. Smith, C.R. Eddy, B.D. Sartwell: Thin Solid Films 298, 33 (1997)
Y. Nakamura, Y. Watanabe, S. Hirayama, et al.: Surf. Coat. Tech. 76–77, 337 (1995)
T.F. Huang, J.S. Harris Jr.: Appl. Phys. Lett. 72, 1158 (1998)
R.D. Vispute., J. Narayan, J.D. Budai: Thin Solid Films 299, 94 (1997)
M. He, N. Cheng, P. Zhou, H. Okabe, J.B. Halpern: J. Vac. Sci. Technol. A 16, 2372 (1998)
J.H. Edgar, C.A. Carosella, et al.: J. Mater. Sci.: Materials in Electronics 7, 247 (1996)
D.B. Chrisey, G.K. Hubler: Pulsed Laser deposition of Thin Films (Wiley-Interscience, New York 1994), and references therein
Z.M. Ren, Y.F. Lu et al.: J. Appl. Phys. 88, 7346 (2000)
B. Cullity: Elements of X-ray Diffraction (Addison–Welsey, London 1955) Ch. 3
C. Carlone, K.M. Lakin, H.R. Shanks: J. Appl. Phys. 55, 4010 (1984)
S. Simon, N. Heide, J.W. Schultze: Surf. Interf. Anal. 20, 431 (1994)
Handbook of X-Ray Photoelectron Spectroscopy (Physical Electronics, Minnesota 1979)
Author information
Authors and Affiliations
Corresponding author
Additional information
PACS
68.55.-a; 81.15.Fg; 77.84.Bw
Rights and permissions
About this article
Cite this article
Goh, Y., Lu, Y., Ren, Z. et al. Influence of substrate temperature and ion-beam energy on the syntheses of aluminium nitride thin films by nitrogen-ion-assisted pulsed-laser deposition. Appl Phys A 77, 433–439 (2003). https://doi.org/10.1007/s00339-002-1452-2
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-002-1452-2