Defect structure of the low temperature α-cristobalite phase and the cristobalite ⇆ tridymite transformation in (Si-Ge)O₂

Abstract

Using minimum exposure techniques, it is feasible to perform high resolution electron microscopy on the α-cristobalite phase of (Si_0.9 Ge_0.1)O₂, which is extremely radiation sensitive. Such images reveal atomic scale information of twins and tridymite-like stacking faults on (1 1 1)_β planes, as well as of domain boundaries resulting from the β→α transition. Polytype structures are formed in certain cases. Morphological features suggest that the phase transformation cristobalite → tridymite proceeds by means of a zonal dislocation mediated synchro-shear process on (1 1 1)_β planes; the geometry of this process is analyzed.