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Potentials induced by the electron-optical-phonon interaction in a quantum well

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Zeitschrift für Physik B Condensed Matter

Abstract

The potential induced by the electron-optical-phonon interaction in a quantum well (QW) is investigated by means of the perturbation theory. We consider the interactions of an electron with both bulklike confined longitudinal optical (LO) phonons and four branches of interface optical (IO) phonons. The spatial distributionV i(z) of the induced potential for QW structures with different heterolayer compositions and different well widths is calculated in detail. The numerical results show that the heterolayer composition of the QW plays an important role in determining the shape ofV i(z) and that the existence of IO-phonons is important to the electronic states in QWs.

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Authors and Affiliations

  1. Institute of Physics, Academia Sinica, P.O. Box 603, 100080, Beijing, People's Republic of China

    Guo-zhong Zhao & Shao-hua Pan

  2. China Center of Advanced Science and Technology (World Laboratory), P.O. Box 8730, 100080, Beijing, People's Republic of China

    Shao-hua Pan

Authors
  1. Guo-zhong Zhao
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  2. Shao-hua Pan
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Zhao, Gz., Pan, Sh. Potentials induced by the electron-optical-phonon interaction in a quantum well. Z. Phys. B - Condensed Matter 99, 375–380 (1995). https://doi.org/10.1007/s002570050051

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  • DOI: https://doi.org/10.1007/s002570050051

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