Abstract
Rhenium-silicon thin films have been characterized as promising compounds of thermoelectric applications by means of analytical transmission electron microscopy and X-ray diffraction referring to composition, morphology, short-range order and phase formation. Beyond the discussion of the results some methodical aspects and problems are presented.
Similar content being viewed by others
Author information
Authors and Affiliations
Additional information
Received: 24 June 1996 / Revised: 16 December 1996 / Accepted: 3 January 1997
Rights and permissions
About this article
Cite this article
Thomas, J., Schumann, J. & Pitschke, W. Characterization of rhenium-silicon thin films. Fresenius J Anal Chem 358, 325–328 (1997). https://doi.org/10.1007/s002160050419
Issue Date:
DOI: https://doi.org/10.1007/s002160050419