Abstract
Scanning electrochemical microscopy (SECM) was used to investigate the effect of ion bombardment on thin films of the conducting polymers poly[3-ethoxy-thiophene] (PEOT) and poly[ethylenedioxy-thiophene] (PEDT). Bombardment with Ar+-ions converts the topmost 30 nm thick layer to an essentially insulating material. SECM approach curves as well as two dimensional scans prove the existence of regions of different conductivity within the irradiated regions that did not show a significant dependence on ion dosage. PEDT layers patterned by ion bombardment through microscopic masks are investigated as prototypes of miniaturized printed circuit boards that can be formed by galvanic copper deposition onto conducting PEDT. Defects in conducting polymer patterns were analyzed by SECM imaging before any deposition of copper. Appropriate representations of SECM images for the evaluation of this technologically important question are discussed.
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Received: 28 November 1999 / Revised: 6 March 2000 / Accepted: 7 March 2000
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Wittstock, G., Asmus, T. & Wilhelm, T. Investigation of ion-bombarded conducting polymer films by scanning electrochemical microscopy (SECM). Fresenius J Anal Chem 367, 346–351 (2000). https://doi.org/10.1007/s002160000389
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DOI: https://doi.org/10.1007/s002160000389