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Line constants and wave properties of cable with sheath interleaved between double semiconductor screens

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Abstract

Cable containing two semiconductor screens has higher influence of the screen on line constants and wave propagation compared to cable with single semiconductor as reported in existing literature. Considering this fact, this work investigates the possible influence of quantitative increase in semiconductor screen on line constants and wave properties of a cable. Here the quantitative increase in semiconductor screen in a cable structure is achieved by considering an additional screen on sheath outer surface along with preexisting screen attached with sheath inner and core outer surface of the cable. For such cable structure, sheath interleaved between double semiconductor screens forms a three layered conductor-semiconductor assembly compared to two layered such assembly in conventional cable. Closed form expressions of surface and mutual impedance of such three layered assembly are derived here using electromagnetic analysis. Then using these expressions, internal impedance matrix of the concerned cable is developed and then validated by reproducing the same matrix using independent circuit approach. Frequency variations of surface impedance of such three layered assembly indicates that both semiconductor screens contribute to the impedance of the assembly compared to single semiconductor in two layered assembly, thus enhancing the influence of screen in concerned cable. Finally a comparative study on the influence of semiconductor properties on line constants and wave properties of cable with sheath containing double, single and no semiconductor screen is performed. Such study indicates that the quantitative increase in semiconductor screen in cable structure considerably improves its attenuation property and wave velocity for a certain ranges of semiconductor properties.

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Authors and Affiliations

  1. Department of Electrical Engineering, National Institute of Technology Meghalaya, Shillong, Meghalaya, India

    Swarnankur Ghosh & Supriyo Das

  2. Department of Electronics and Communication Engineering, Indian Institute of Information Technology Design and Manufacturing, Kancheepuram, Chennai, India

    B. Chitti Babu

  3. Electrical Engineering Department, Ramkrishna Mahato Govt. Engineering College, Purulia, (Formerly Purulia Govt. Engineering College), Purulia, West Bengal, India

    Mousam Ghosh

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  1. Swarnankur Ghosh
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  2. B. Chitti Babu
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Correspondence to Swarnankur Ghosh.

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Ghosh, S., Chitti Babu, B., Ghosh, M. et al. Line constants and wave properties of cable with sheath interleaved between double semiconductor screens. Electr Eng 104, 2879–2892 (2022). https://doi.org/10.1007/s00202-022-01497-5

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  • DOI: https://doi.org/10.1007/s00202-022-01497-5

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