Skip to main content
SpringerLink
Log in

Simulation of abrasive polishing process of single crystal silicon based on molecular dynamics

  • ORIGINAL ARTICLE
  • Published:
The International Journal of Advanced Manufacturing Technology Aims and scope Submit manuscript

A Correction to this article was published on 29 July 2022

This article has been updated

Abstract

Molecular dynamics simulation is used to simulate the polishing process of silicon in this paper. Several models such as single abrasive and multi-abrasive are established for simulation analysis. The results show that the greater the height difference between the double abrasives, the greater the polishing force in the machining process, resulting in higher surface bulge and deeper underground damage after polishing. When polishing with a single abrasive, the polishing depth plays a dominant role in the changes in polishing force, temperature and coordination number. When multiple abrasives are arranged at a certain angle, the force effect and damage distribution are more complex because of the coupling effect of abrasives. Due to the effect of multiple abrasives, the heat between abrasives cannot be dissipated in time. As a result, the temperature of multiple abrasives polishing at a certain angle is higher than that of the other two cases (single abrasive and double abrasives).

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8
Fig. 9
Fig. 10
Fig. 11
Fig. 12
Fig. 13
Fig. 14
Fig. 15
Fig. 16

Similar content being viewed by others

Data availability

The data used to support the findings of this study are available from the corresponding author upon request.

Change history

References

  1. Hou ZJ, Ge PQ, Gao YF (2007) The development of a wire saw for wafer slicing of single-crystal silicon. Int J Comput Appl Technol 29(2–4):187–190

    Article  Google Scholar 

  2. Patolsky F, Granot E, Kosloff A, Heifler O (2016) Nanodicing single crystalline silicon nanowire arrays. Nano Lett 16(11):6960–6966

    Article  Google Scholar 

  3. Demant M, Welschehold T, Oswald M, Bartsch S, Brox T, Schoenfelder S, Rein S (2017) Microcracks in silicon wafers I: inline detection and implications of crack morphology on wafer strength. IEEE J Photovolt 6(1):126–135

    Article  Google Scholar 

  4. Xiang Y (2021) The size effects of point defect on the mechanical properties of monocrystalline silicon: a molecular dynamics study. Materials 14(11):3011

    Article  Google Scholar 

  5. Liu B, Xu Z, Chen C, Li R, Liang L (2020) Numerical and experimental investigation on ductile deformation and subsurface defects of monocrystalline silicon during nano-scratching. Appl Surf Sci 528:147034

    Article  Google Scholar 

  6. Kim H, Park S, Kang B, Kim S, Tark SJ, Kim D, Dahiwale SS (2013) Effect of texturing process involving saw-damage etching on crystalline silicon solar cells. Appl Surf Sci 284(11):133–137

    Article  Google Scholar 

  7. Guo X, Zhai C, Liu Z, Zhang L, Jin Z, Guo D (2015) Effect of stacking fault in silicon induced by nanoindentation with MD simulation. Mater Sci Semicond Process 30:112–117

    Article  Google Scholar 

  8. My A, Fpa B, Rong YA, Bd A, Lin ZA, Hw A (2019) Study on the surface damage mechanism of monocrystalline silicon in micro ball-end milling. Precis Eng 56:223–234

    Article  Google Scholar 

  9. He LH, Zhu FL, Liu YH, Liu S (2017) Investigation of machining mechanism of monocrystalline silicon in nanometric grinding. AIP Adv 7(5):055104

    Article  Google Scholar 

  10. Shen J, Zhu X, Chen J, Tao P, Wu X (2019) Investigation on the edge chipping in ultrasonic assisted sawing of monocrystalline silicon. Micromachines 10(9)

  11. Pizani PS, Jasinevicius R, Duduch JG, Porto AJV (1999) Ductile and brittle modes in single-point-diamond-turning of silicon probed by Raman scattering. J Mater Sci Lett 18(14):1185–1187

    Article  Google Scholar 

  12. Zarudi I, Zhang LC, Cheong WCD, Yu TX (2005) The difference of phase distributions in silicon after indentation with Berkovich and spherical indenters. Acta Mater 53(18):4795–4800

    Article  Google Scholar 

  13. Zarudi I, Zou J, Zhang LC (2003) Microstructures of phases in indented silicon: A high resolution characterization. Appl Phys Lett 82(6):874–876

    Article  Google Scholar 

  14. Yan J, Syoji K, Kuriyagawa T, Suzuki H (2002) Ductile regime turning at large tool feed. J Mater Process Technol 121(2–3):363–372

    Article  Google Scholar 

  15. Chen M, Zhao Q, Shen D, Dan L (2005) The critical conditions of brittle–ductile transition and the factors influencing the surface quality of brittle materials in ultra-precision grinding. J Mater Process Technol 168(1):75–82

    Article  Google Scholar 

  16. Kumar RS (2013) A predictive model of the critical undeformed chip thickness for ductile–brittle transition in nano-machining of brittle materials. Int J Mach Tools Manuf 64:114–122

    Article  Google Scholar 

  17. Liu K, Li XP, Rahman M, Neo KS, Liu XD (2007) A study of the effect of tool cutting edge radius on ductile cutting of silicon wafers. Int J Adv Manuf Tech 32(7–8):631

    Article  Google Scholar 

  18. Huo FW, Guo DM, Kang RK (2012) Nanogrinding of SiC wafers with high flatness and low subsurface damage. Trans Nonferrous Met Soc China 22(12):3027–3033

    Article  Google Scholar 

  19. Svobodova-Sedlackova A, Barreneche C, Alonso G, Fernandez AI, Gamallo P (2020) Effect of nanoparticles in molten salts–MD simulations and experimental study. Renew Energy 152:208–216

    Article  Google Scholar 

  20. Kang RK, Guo XG, Guo DM, Jin ZJ (2004) A study of the molecular dynamics simulation in nanometric grinding. Key Eng Mater 257:33–38

    Article  Google Scholar 

  21. Brocail J, Watremez M, Dubar L, Bourouga B (2008) Contact and friction analysis at tool-chip interface to high-speed machining. Int J Mater Form 1(S1):1407–1410

    Article  Google Scholar 

  22. De-Gang LI, Liang YC, Bai QS, Dong S (2008) Molecular dynamics simulation and experiments of nano-indentation of single crystal silicon (111) plane. Nanotechnol Precis Eng 6(4):242–248

    Google Scholar 

  23. Müting J, Bobal V, Vines L, Grossner U (2021) Phosphorus implantation into 4H-SiC at room and elevated temperature. Semicond Sci Technol 36(6):065002

    Article  Google Scholar 

  24. Meng B, Yuan D, Xu S (2019) Coupling effect on the removal mechanism and surface/subsurface characteristics of SiC during grinding process at the nanoscale. Ceram Int 45(2):2483–2491

    Article  Google Scholar 

  25. Zhou P, Shi X, Li J, Sun T, Zhu Y, Wang Z, Chen J (2019) Molecular dynamics simulation of SiC removal mechanism in a fixed abrasive polishing process. Ceram Int 45(12):14614–14624

    Article  Google Scholar 

  26. Dai H, Hu Y, Wu W, Yue H, Duan H (2021) Molecular dynamics simulation of ultra-precision machining 3C-SiC assisted by ion implantation. J Manuf Process 69:398–411

    Article  Google Scholar 

  27. Cheong W, Zhang LC (2000) Molecular dynamics simulation of phase transformations in silicon monocrystals due to nano-indentation. Nanotechnology 11(3):173

    Article  Google Scholar 

  28. Erhart P, Albe K (2005) Analytical potential for atomistic simulations of silicon, carbon, and silicon carbide. Phys Rev B 71(3):035211.28

  29. Merchant ME (1945) Mechanics of the metal cutting process. I. Orthogonal cutting and a type 2 chip. J Appl Phys 16(5):267–275

    Article  Google Scholar 

  30. Kim DE, Oh SI (2008) Deformation pathway to high-pressure phases of silicon during nanoindentation. J Appl Phys 104(1):013502

    Article  MathSciNet  Google Scholar 

  31. Hecker RL, Ramoneda IM, Liang SY (2003) Analysis of wheel topography and grit force for grinding process modeling. J Manuf Process 5(1):13–23

    Article  Google Scholar 

  32. Inasaki I (1998) Principles of abrasive processing. Mach Sci Technol 2(1):155–156

    Article  Google Scholar 

  33. Tnshoff HK, Karpuschewski B, Andrae P, Türich A (1998) Grinding performance of superhard abrasive wheels final report concerning CIRP co-operative work in STC G. CIRP Ann Manuf Technol 47(2):723–732

    Google Scholar 

  34. Basuray PK, Misra BK, Lal GK (1977) Transition from ploughing to cutting during machining with blunt tools. Wear 43(3):341–349

    Article  Google Scholar 

  35. Park HW, Liang SY (2009) Force modeling of microscale grinding process incorporating thermal effects. Int J Adv Manuf Tech 44(5):476–486

    Article  Google Scholar 

  36. Liu K, Li XP (2001) Ductile cutting of tungsten carbide. J Mater Process Technol 113(1–3):348–354

    Article  Google Scholar 

  37. Son SM, Lim HS, Ahn JH (2005) Effects of the friction coefficient on the minimum cutting thickness in micro cutting. Int J Mach Tools Manuf 45(4–5):529–535

    Article  Google Scholar 

  38. Shaw MC (1972) New developments in grinding. Proceedings of the international grinding conference, Pittsburgh, Pennsylvania

  39. Goddard J, Wilman H (1962) A theory of friction and wear during the abrasion of metals. Wear 5(2):114–135

    Article  Google Scholar 

  40. Sin H, Saka N, Suh NP (1979) Abrasive wear mechanisms and the grit size effect. Wear 55(1):163–190

    Article  Google Scholar 

Download references

Acknowledgements

The authors would like to appreciate the National Natural Science Foundation of China (52105178, 12162008), National Natural Science Foundation of Hunan (2022JJ40056), and Guizhou University cultivation project (Guida cultivation [2020] No. 10).

Author information

Authors and Affiliations

  1. School of Mechanical Engineering, Guizhou University, Guiyang, 550025, China

    Xiaosong Meng, Haixia Yue, Weilong Wu & Houfu Dai

Authors
  1. Xiaosong Meng
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Haixia Yue
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Weilong Wu
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Houfu Dai
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Houfu Dai.

Ethics declarations

Ethics approval

Ethical approval was obtained from the College of Mechanical Engineering of Guizhou University.

Consent to participate

Not applicable.

Consent to publish

All authors have seen the manuscript and approved to submit to your journal, and we would greatly appreciate for your attention and consideration.

Competing interests

The authors declare no competing interests.

Additional information

Publisher's note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

The original online version of this article was revised: In this paper, the acknowledgements are wrong. Two funding funds have been repeated.

Rights and permissions

Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Meng, X., Yue, H., Wu, W. et al. Simulation of abrasive polishing process of single crystal silicon based on molecular dynamics. Int J Adv Manuf Technol 121, 7195–7211 (2022). https://doi.org/10.1007/s00170-022-09770-4

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00170-022-09770-4

Keywords

Search

Navigation