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A simple approach to solving multi-response quality characteristic problems in CMOS ion implantation

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Abstract

This study develops a systematic algorithm for optimizing the multi-response quality characteristics in complementary metal-oxide semiconductor (CMOS) ion implantation experiments in terms of overall product quality, by adopting the grey situation decision-making method. Finally, the feasibility and effectiveness of the proposed algorithm is demonstrated by such an experiment.

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Authors and Affiliations

  1. Graduate Institute of Business and Management, Yuanpei University of Science and Technology, No. 306, Yuan-Pei Street, Hsin-Chu, 30015, Taiwan

    Chin-Tsai Lin

  2. Departmend of Information Management, Yuanpei University of Science and Technology, No. 306, Yuan-Pei Street, Hsin-Chu, 30015, Taiwan

    Che-Wei Chang

  3. Graduate Institute of International Business, National Dong Hwa University, 1, Sec. 2, Da Hsueh Rd., Shou-Feng, Hualien, Taiwan

    Chie-Bein Chen

Authors
  1. Chin-Tsai Lin
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  2. Che-Wei Chang
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  3. Chie-Bein Chen
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Correspondence to Chin-Tsai Lin.

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Lin, CT., Chang, CW. & Chen, CB. A simple approach to solving multi-response quality characteristic problems in CMOS ion implantation. Int J Adv Manuf Technol 28, 592–595 (2006). https://doi.org/10.1007/s00170-004-2396-9

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  • DOI: https://doi.org/10.1007/s00170-004-2396-9

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