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High Efficiency and High Output Power HFET GaN Doherty Power Amplifier with Linearity Region Extension for Wireless Applications

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Abstract

High efficiency and high gain Doherty power amplifier (DPA) with high output power is proposed in this paper for wireless mobile applications in the UHF band. The proposed structure consists of two conventional power amplifiers, class-AB as the carrier amplifier and class-C as the auxiliary amplifier. Two similar transistors of HFET GaN technology and λ/4 micro-strip lines to model the inductors and input/output matching networks are employed as the main elements of the proposed structure. Past matching network and optimal power divider are also used to obtain high improvements in the suggested DPA. Using the proposed structure, return loss reduction, efficiency and gain increasing and bandwidth property improvement have been achieved compared to other efficient works in this filed. The proposed DPA has 50–67.3% drain efficiency at the frequency of 2 GHz, high gain as 18.1 dB, saturation output power as 46.91 dBm and output power at P-1 dB point as 43.37 dBm.

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Data sharing not applicable to this article as no datasets were generated or analyzed during the current study.

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Authors and Affiliations

  1. Department of Electrical Engineering, Kermanshah University of Technology, Kermanshah, Iran

    Azadeh Norouzi Kangarshahi & Abdulhamid Zahedi

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  1. Azadeh Norouzi Kangarshahi
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  2. Abdulhamid Zahedi
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Correspondence to Abdulhamid Zahedi.

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Kangarshahi, A.N., Zahedi, A. High Efficiency and High Output Power HFET GaN Doherty Power Amplifier with Linearity Region Extension for Wireless Applications. Circuits Syst Signal Process 41, 2503–2521 (2022). https://doi.org/10.1007/s00034-021-01919-y

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  • DOI: https://doi.org/10.1007/s00034-021-01919-y

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