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Depth profiling of iron impurities on GaAs surfaces using total reflection X-ray fluorescence

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Abstract.

 Depth profiling of iron impurities on GaAs surfaces is performed by means of total reflection X-ray fluorescence. A numerical processing procedure presented previously is used for the evaluation of the experimental data. A detection limit of 1011 atoms Fe/cm2 on GaAs surfaces has been achieved.

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Authors and Affiliations

  1. Institute of High-Energy Physics, P.O. Box 2732, Beijing 100080, P.R. China, , , , , , CN

    Q.-M. Fan, Y.-W. Liu & C.-L. Wei

Authors
  1. Q.-M. Fan
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  2. Y.-W. Liu
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  3. C.-L. Wei
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Additional information

Received: 16 January 1995/Revised: 30 March 1995/Accepted: 4 April 1995

Acknowledgements. This work was supported by the National Science Foundation of China and by LNAT Lab Academia Sinica.

Correspondence to: Q.-M. Fan

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Fan, QM., Liu, YW. & Wei, CL. Depth profiling of iron impurities on GaAs surfaces using total reflection X-ray fluorescence. Fresenius J Anal Chem 354, 193–194 (1996). https://doi.org/10.1007/PL00012719

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  • DOI: https://doi.org/10.1007/PL00012719

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