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Electron-Beam Diagnostics of Gas Mixtures Involved in SiO2 Film Deposition

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Abstract

This paper seeks to substantiate the use of the electron-induced fluorescent (electron-beam) technique for measuring the densities otgas components in mixtures of N2O, O2, Ar, and SiH4 over the range 1013 ≤ 1017 cm-3. Experiments have been carried out in free jets which are a convenient gas target for investigations of this kind. Several strong spectrally resolved electron-induced emissions in these gases have been chosen. It is shown that radiating states are excited by direct electron impact. n1e rate constants of collisional quenching of fluorescence have been measured, which made it possible to expand the field of application of the method. A method is proposed, and an experiment has been carried out to measure the absolute concentrations of mixture components in a real plasma-chemical reactor.

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Authors and Affiliations

  1. Institute of Thermophysics, Siberian Branch of the Russian Academy of Science, Prospekt Lavrentjeva 1, Novisibirsk, 630090, Russia

    A. E. Belikov, O. V. Kuznetsov & R. G. Sharafutdinov

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  1. A. E. Belikov
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  2. O. V. Kuznetsov
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  3. R. G. Sharafutdinov
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Belikov, A.E., Kuznetsov, O.V. & Sharafutdinov, R.G. Electron-Beam Diagnostics of Gas Mixtures Involved in SiO2 Film Deposition. Plasma Chem Plasma Process 15, 481–499 (1995). https://doi.org/10.1007/BF03651419

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  • DOI: https://doi.org/10.1007/BF03651419

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