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Reducing Dislocations in GaAs and InP

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Abstract

Currently, the major issue in the growth of GaAs and InP single crystal density. This is necessitated by optical and electronis device performance requirements. This paper reviews the major appplications of these III–V compounds and then describes the theoretical analysis from which a practical realization of dislocation elimination in crystal growth can be based. Also outlined are recent developments in low temperature gradient growth and hardening by In-alloying that in some judicious combination offer the hope to meet device and IC fabrication objectives

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Authors
  1. A. R. VonNeida
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  2. A. S. Jordan
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Additional information

A.R. Von Neida received his Ph.D. in metallurgy from Yale University. He is currently a Distinguished Member of the Technical Staff of the Device Materials Research Department at AT&T Bell Laboratories in Murray Hill, New Jersey.

Andrew S. Jordan received his Ph.D. in metallurgy from the University of Pennsylvania. He is currently Supervisor of the Heterostructure Materials Group at AT&T Bell Laboratories in Murray Hill, New Jersey.

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VonNeida, A.R., Jordan, A.S. Reducing Dislocations in GaAs and InP. JOM 38, 35–40 (1986). https://doi.org/10.1007/BF03257816

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