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The dry etching of group III-nitride wide-bandgap semiconductors

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Abstract

Fabricating device structures from the III-N semiconductors requires dry-etching processes that leave smooth surfaces with stoichiometric composition after transferring patterns with vertical sidewalls. Results obtained by standard methods are summarized, and the extent of concomitant ion bombardment damage is assessed. A new low-damage technique—low-energy electron- enhanced etching—that avoids ion bombardment altogether is described, and early results for III-N materials are summarized. Etching issues critical in forming contacts and fabricating laser facets and mirrors are highlighted, and some prospects for future work are also identified.

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Authors and Affiliations

  1. Department of Chemistry and Biochemistry, University of California, Los Angeles, USA

    H. P. Gillis Ph.D. (visiting professor)

  2. Microelectronics Research Center, Georgia Institute of Technology, USA

    D. A. Choutov Ph.D. (research associate) & K. P. Martin Ph.D. (senior research scientist)

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  1. H. P. Gillis Ph.D.
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  2. D. A. Choutov Ph.D.
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  3. K. P. Martin Ph.D.
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Gillis, H.P., Choutov, D.A. & Martin, K.P. The dry etching of group III-nitride wide-bandgap semiconductors. JOM 48, 50–55 (1996). https://doi.org/10.1007/BF03223028

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