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Progress and Prospect of Growth of Wide-Band-Gap Group III Nitrides

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III-Nitride Based Light Emitting Diodes and Applications

Part of the book series: Topics in Applied Physics ((TAP,volume 133))

Abstract

GaAs, InP, and their related compound semiconductors can be grown on native substrates, whereas such growth was not possible for group III nitride semiconductors in the 1970s and 1980s. Despite this drawback, researchers were able to use novel functions of group III nitride semiconductors by growing their thin films on nonnative substrates such as sapphire SiC and Si.

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References

  1. F. Fichter, Z. Anorg. Chem. 54, 322 (1907)

    Article  Google Scholar 

  2. F. Fischer, F. Schroter, Ber. Dtsch. Chem. Ges. 43, 1465 (1910)

    Article  Google Scholar 

  3. W.C. Johnson, J.B. Parsons, M.C. Crew, J. Phys. Chem. 36, 2588 (1932)

    Article  Google Scholar 

  4. H. Welker, Zeitschrift fuer Naturforschung, 7a, 744 (1952)

    Google Scholar 

  5. N. Holonyak, S.F. Bevacqua, Appl. Phys. Lett. 1, 82 (1962)

    Article  ADS  Google Scholar 

  6. E.E. Loebner, IEEE Trans. Elec. Dev. Electron Devices 23, 675 (1976)

    Google Scholar 

  7. H.P. Maruska, J.J. Tietjen, Appl. Phys. Lett. 15, 327 (1969)

    Article  ADS  Google Scholar 

  8. J.I. Pankove, E.A. Miller, D. Richman, J.E. Berkeyheiser, J. Lumin. 4, 63 (1971)

    Article  Google Scholar 

  9. D. Richman, J. Phys. Chem. Sol. 24, 1131 (1963)

    Article  ADS  Google Scholar 

  10. J.A. Van Vechten, Phys. Rev. B 7, 1479 (1973)

    Article  ADS  Google Scholar 

  11. J. Karpinski, J. Jun, S. Porowski, J. Cryst. Growth 66, 1 (1984)

    Article  ADS  Google Scholar 

  12. R. Haitz, J.Y. Tsao, Phys. Status Solidi (A) 208, 17 (2011)

    Article  ADS  Google Scholar 

  13. A. Kaneta, M. Funato, Y. Narukawa, T. Mukai, Y. Kawakami, Phys. Status Solidi (C) 3, 1897 (2006)

    Google Scholar 

  14. K. Osamura, K. Nakajima, Y. Murakami, P.H. Shingu, A. Ohtsuki, Solid State Comm. 11, 617 (1972)

    Article  ADS  Google Scholar 

  15. H.P. Maruska, W.C. Rhines, D.A. Stevenson, Mater. Res. Bull. 7, 777 (1972)

    Google Scholar 

  16. Y. Matsumoto, Jpn. J. Appl. Phys. 13, 1307 (1974)

    Article  ADS  Google Scholar 

  17. M. Boulou, M. Furtado, G. Jacob, Philips Tech. Rev. 37, 237 (1977)

    Google Scholar 

  18. Y. Ohki, Y. Toyoda, H. Kobayashi, I. Akasaki, Inst. Phys. Conf. Ser. 63, 479 (1982)

    Google Scholar 

  19. L. Hoffman, G. Ziegler, D. Theis, C. Weyrich, J. Appl. Phys. 53, 6962 (1982)

    Article  ADS  Google Scholar 

  20. N.B. Lukyanchkova, T.M. Pavelko, G.S. Pekar, N.N. Tkachenko, M.K. Sheinkman, Phys. Status Solidi (A), 64, 697 (1981)

    Google Scholar 

  21. T. Kawabata, T. Matsuda, S. Koike, J. Appl. Phys. 56, 2367 (1984)

    Article  ADS  Google Scholar 

  22. S. Yoshida, S. Misawa, S. Gonda, Appl. Phys. Lett. 42, 427 (1983)

    Article  ADS  Google Scholar 

  23. M.A. Khan, R.A. Skogman, R.G. Schulze, M. Gershenzon, Appl. Phys. Lett. 42, 430 (1983)

    Article  ADS  Google Scholar 

  24. H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986)

    Article  ADS  Google Scholar 

  25. M. Akiyama, Y. Kawarada, K. Kaminishi, Jpn. J. Appl. Phys. 23, L843 (1984)

    Article  ADS  Google Scholar 

  26. Japan Patent, S60-256806 (1985)

    Google Scholar 

  27. Japan Patent, H3-89840 (1991)

    Google Scholar 

  28. H. Amano, I. Akasaki, T. Kozawa, K. Hiramatsu, N. Sawaki, K. Ikeda, Y. Ishii, J. Lumin. 40&41, 121 (1988)

    Article  Google Scholar 

  29. G.V. Saparin, S.K. Obyden, I.F. Chetverkova, M.V. Chukichev, S.I. Popov, Vestnik Moskovskogo Universiteta Seriya 3 Fisika Astronomiya 24, 56 (1983)

    Google Scholar 

  30. G.V. Saparin, S.K. Obyden, M.V. Chukichev, S.I. Popov, J. Lumin. 31, 684 (1984)

    Article  Google Scholar 

  31. J.C. Philips, G. Lucovsky, Bonds and Bands in Semiconductors, 1st edn. (Momentum Press, 1973), p. 239

    Google Scholar 

  32. H. Amano, M. Kito, K. Hiramatsu, I. Akasaki, Jpn. J. Appl. Phys. 28, L2112 (1989)

    Article  ADS  Google Scholar 

  33. Japan Patent, H3-321353 (1991)

    Google Scholar 

  34. H. Amano, M. Kitoh, K. Hiramatsu, I. Akasaki, Inst. Phys. Conf. Ser. 106, 725 (1990)

    Google Scholar 

  35. T. Matsuoka, H. Tanaka, T. Sasaki, A. Katsui, Inst. Phys. Conf. Ser. 106, 141 (1990)

    Google Scholar 

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Acknowledgements

I wish to express my gratitude to M. Yamaguchi and Y. Honda, Nagoya University, and M. Iwaya, T. Takeuchi, S. Kamiyama and I. Akasaki of Meijo University for daily discussions.

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Authors and Affiliations

  1. Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya, 464-8603, Japan

    Hiroshi Amano

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  1. Hiroshi Amano
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Correspondence to Hiroshi Amano .

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Editors and Affiliations

  1. Department of Materials Science and Engineering, Korea University, Seoul, Korea (Republic of)

    Tae-Yeon Seong

  2. Department of Electrical Engineering, Yale University, New Haven, Connecticut, USA

    Jung Han

  3. Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya, Aichi, Japan

    Hiroshi Amano

  4. Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia, USA

    Hadis Morkoç

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Amano, H. (2017). Progress and Prospect of Growth of Wide-Band-Gap Group III Nitrides. In: Seong, TY., Han, J., Amano, H., Morkoç, H. (eds) III-Nitride Based Light Emitting Diodes and Applications. Topics in Applied Physics, vol 133. Springer, Singapore. https://doi.org/10.1007/978-981-10-3755-9_1

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