Abstract
The angle-dependent geometrical magnetoresistance method (ΦMR) combined with the usual low-magnetic-field geometrical magnetoresistance (GMR) technique is a useful tool to determine the electrical parameters of GaAs epitaxial layers grown onto highly conductive substrate or to separate the active layer resistance from the contact resistance in a single Gunn device. The theory and the application of the method is summarized as well as the accuracy and the results are given for epitaxial structures and semi-encapsulated Gunn devices.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
L. Gútai andI. Mojzes: Appl. Phys. Lett.,26, 325, 1975.
T. R. Jervis andE. F. Johnson, Solid-State Electron,13, 181, 1970.
B. V. Morozov, et al., Thin Solid Films.36, 419, 1976.
W. J. Patrick, Solid-State Electron.,9, 203, 1966.
A. C. Beer, Solid State Physics. Suppl. 4 Acad. Press, New York and London. 1963. pp. 50–51.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Gútai, L., Görög, T. Electrical characterization of GaAs epitaxial layers grown onto a conductive substrate. Acta Physica 44, 69–77 (1978). https://doi.org/10.1007/BF03157221
Issue Date:
DOI: https://doi.org/10.1007/BF03157221