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Growth mechanism induced defects in solution-grown single crystals

  • Condensed Matter
  • Published:
Acta Physica Hungarica

Abstract

Some consequences of the simultaneous activity of the 2D nucleation and dislocation mechanisms of the growth are experimentally demonstrated and discussed.

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Abbreviations

2D:

two-dimensional

GM:

growth mechanism

GB:

grain boundary

OM/TEM:

optical or transmission electron microscope/microscopy

y :

surface step distance

r c :

critical radius of 2D nuclei

l s :

main surface diffusion path

I c, Im :

nucleation rate of coherent (c) or mismatched (m) 2D nuclei, resp

A m :

deformation work due to mismatch

k :

Boltzmann constant

T :

temperature

a :

atomic step height

v n :

normal growth rate of a face

v ∞ :

step moving rate

v n (2D),v ∞ 2D:

contributions of 2D nuclei to the normal rate or to step rate, resp

E,E 0 :

elastic energy or energy proportionality factor of a screw dislocations network, resp

α:

rotation angle

μ:

shear modulus

b :

Burgers vector

r 0 :

dislocation core radius

K 1,K 2 :

constants

D i :

density ofi-th type defects (i=1,2, ...)

t j :

j-th time portion (j=o, p, g) whereo: obtaining,p: preparing,g: growing

a j :

proportionality factor

P :

price

F :

occurrence frequency

References

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Authors and Affiliations

  1. Research Laboratory for Crystal Physics, Hungarian Academy of Sciences, 1502, Budapest, Hungary

    L. Malicskó

Authors
  1. L. Malicskó
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Malicskó, L. Growth mechanism induced defects in solution-grown single crystals. Acta Physica Hungarica 70, 203–209 (1991). https://doi.org/10.1007/BF03156267

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  • DOI: https://doi.org/10.1007/BF03156267

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