Abstract
A technique for the measurement of doping and mobility depth profiles in GaAs epitaxial layers is reported. The design as well as preparation technology of a test chip, an automated measurement set-up for on-wafer measurements and a cryostat for temperature dependent measurements are described.
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References
R. A. Pucel and C. F. Krumm, Electronics Letters,12, 240, 1976.
C. D. Kourkoutas, P. C. Euthymiou, B. Szentpáli, B. Kovács and K. Somogyi, Solid State Commun.,78, 849, 1991.
Switching Handbook, Keithley Instruments, Inc./Instrument Division, First Edition, Cleveland, Ohio, USA, pp. 4.31–4.33, August, 1987.
Á. Nemcsics, Electrolytic CV profiling, to be published in Elektronikai Technológia, Mikrotechnika (in Hungarian).
S. M. Sze, Physics of Semiconductor Devices, Second Edition, John Wiley and Sons, New York, 1981.
Y. K. Fukai and M. Muraguchi, IEEE Electron Dev. Letters,9, 74, 1988.
G. J. Ouwerling and J-C. Staalenburg, Solid-State Electron.,32, 777, 1989.
J. D. Wiley and G. L. Miller, IEEE Trans. Electron Dev.,ED-22, 265, 1975.
P. Tüttö, private communication, 1986.
H. Fukui, Bell System Tech. J.,58, 771, 1979.
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Szentpáli, B., Kovács, B., Riesz, F. et al. Measurement techniques for the determination of doping and mobility profiles in GaAs epitaxial layers. Acta Physica Hungarica 74, 21–30 (1994). https://doi.org/10.1007/BF03055234
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DOI: https://doi.org/10.1007/BF03055234