Abstract
We investigated the effect of 0.65 MeV electron irradiation on the transport parameters of GaAs FATFETs with an S-doped active channel of thickness 0.2 μm to 5 μm. We measured mainly the drift mobility and carrier concentration profile at severall temperatures from 170 K to 300 K before and after irradiation. A decrease of the mobility is observed of the mobility profiles as a function of temperature by introduction of different scattering mechanisms gives the scattering parameters and particularly the scattering rate by ionized impurities and space charge before and after irradiation. DLTS and DLOES measurements indicated three electron traps and four hole traps. The results show that the two main electron traps E2 and E3 are affected by an intermediate donor type electronic stateT x The nature ofTx is not known, except that it behaves like a donor.
Similar content being viewed by others
References
B. Szentpáli, B. Kovács, D. Huber, C. D. Kourkoutas, P. C. Euthymiou and G. E. Zardas, Solid State Commun.80, 321, 1991.
C. D. Kourkoutas, B. Kovács, P. C. Euthymiou, B. Szentpáli, K. Somogyi, P. C. Banbury, Phys. Stat. Sol. (a)135, K21, 1993.
C. D. Kourkoutas, B. Kovács, P. C. Euthymiou, B. Szentpáli, K. Somogyi and G. E. Giakoumakis, accepted for publication in Sol. St. Communications.
I. Moizes, B. Szentpáli, B. Kovács, P. Gottwald, S. Bíró, H. Elschner, R. Stenzel, M. Passlack, T. Lalinsky and P. Kordos, Proc. 8th Coll. on Microwave Communications, Budapest, Hungary, 1986.
G. M. Martin, A. Mitonneau and A. Mircea, Electron. Lett.,13, 191, 1977.
Wu Fengmei, Lai Kisi, Xu Link, Gong Banrui and Zhou Xiugment, 14th Int. Conf. on Defects in Semiconductors, Paris, France, Mater. Sci. Forum,10–12, 1039, 1986.
A. Mitonneau, A. Mircea, G. M. Martin and D. Pons, Rev. de Phys. Appl.,14, 853, 1979.
A. Mitonneau, G. M. Martin and A. Mircea, Electron. Lett.,13, 666, 1977.
L. R. Weissberg, J. Appl. Phys.,33, 1812, 1962.
D. W. Palmer, in: Growth and Characterization of Semiconductors, eds R. A. Strandling and P. C. Klipstein; Adam Hilger, Bristol, New York, 1990.
D. Pons and J. C. Bourgoin, J. Phys. C: Sol. St. Phys.,18, 3839, 1985.
D. Stievenard and J. C. Bourgoin, J. Appl. Phys.,59, 743, 1986.
C. D. Kourkoutas, P. C. Euthymiou and G. J. Papaioannou, Sol. Stat. Commun.75 (9), 999, 1990.
M. Yamaguchi and C. Uemura, J. Appl. Phys.,57 (2), 604, 1985.
D. Pons, in: Defects and Radiation Effects in Semiconductors, Inst. Phys. Conf. Ser.59, Chapter 6, p. 269, 1981.
D. Pons, P. M. Mooney and J. C. Bourgoin, J. Appl. Phys.,51 (4), 2038, 1980.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Euthymiou, P.C., Kourkoutas, C.D., Szentpáli, B. et al. A review article on the transport properties in fatfets upon irradiation. Acta Physica Hungarica 74, 7–19 (1994). https://doi.org/10.1007/BF03055233
Issue Date:
DOI: https://doi.org/10.1007/BF03055233