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Low temperature OMVPE growth of ZnSe withTertiary-butyl allyl selenide and dimethylzinc-triethylamine

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Abstract

The growth of high quality ZnSe by organometallic vapor phase epitaxy (OMVPE) has been investigated fortertiary-butyl allyl selenide (tBASe), combined with dimethylzinc-triethylamine (DMZn : NEt3). Single crystalline ZnSe films were grown on GaAs at temperature as low as 350°C with a reasonable growth rate (~1 µm/h). Secondary ion mass spectrometry (SIMS) spectra show a negligible carbon incorporation in ZnSe films from tBASe even at high VI/II ratio, in contrast the carbon concentration of 1021 cm-3 in ZnSe films grown from diallyl selenide (DASe)and methylallylselenide (MASe). Good surface morphology, crystalline and interface quality of ZnSe on (001) GaAs are confirmed by scanning electron microscopy, double crystal diffractometry (DCD) and Rutherford backscattering spectrometry (RBS). Photoluminescence at 10K shows sharp near-band-edge excitonic spectra.

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Authors and Affiliations

  1. Department of Metallurgical Engineering, Chemical Engineering, USA

    Jae -Chang Kim

  2. Medical Research Institute Kyungpook, National University Taegu, 702-701, Korea

    Jeong -Ok Lim

  3. Department of Material Science and Engineering, MIT, 02139, Cambridge, MA, USA

    K. F. Jensen

Authors
  1. Jeung -Soo Huh
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  2. Jae -Chang Kim
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  3. Jeong -Ok Lim
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  4. K. F. Jensen
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Huh, J.S., Kim, J.C., Lim, J.O. et al. Low temperature OMVPE growth of ZnSe withTertiary-butyl allyl selenide and dimethylzinc-triethylamine. Metals and Materials 3, 103–107 (1997). https://doi.org/10.1007/BF03026132

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