Abstract
We review recent advances in the investigation of vertical cavity saturable absorber devices and their use for the all-optical regeneration of telecommunication signals in ultra-long-haul transmission systems. Such devices are polarization-insensitive and operate as fully passive nonlinear optical elements. Two approaches for obtaining fast recovery absorber materials are described, relying upon ion irradiation or upon iron doping. The vertical micro-cavity devices are designed so as to optimize the switching contrast and the operating power. Their functional behaviour as extinction ratio amplifiers has been characterized and their optimal operating conditions have been determined. The potential application of these devices to all-optical regeneration has been investigated through numerical simulations and fully demonstrated in several long-distance transmission loop experiments, with results obtained at 10, 20 and 40 Gbit/s, showing significant improvements in system haul or operational margins. A four-channel fibered module has also been fabricated, as a perspective towards the development of wavelength division multiplexing (WDM) saturable absorber modules.
Résumé
Nous décrivons les développements récents de dispositifs absorbants saturables à cavité verticale et leur intérêt pour la régénération tout-optique des signaux dans les systèmes de transmission à très longue distance. Ces dispositifs insensibles à la polarisation sont utilisés comme éléments non-linéaires totalement passifs. Deux approches permettant un recouvrement rapide des matériaux absorbants sont décrites, l’une par irradiation ionique, l’autre par dopage au fer. Les microcavités verticales sont conçues de manière à optimiser le contraste de commutation et la puissance optique nominale. Leur comportement en tant qu’amplificateur de taux d’extinction a été caractérisé et les conditions pour un fonctionnement optimal déterminées. Leur application potentielle à la régénération tout-optique est examinée au travers de simulations numériques, et démontrée dans des expérimentations de transmission sur boucle à recirculation à 10, 20 et 40 Gbit/s, montrant des améliorations significatives de portée ou de marges. Un module fibré à 4 canaux a été réalisé dans la perspective d’un développement pour les signaux multiplexés en longueurs d’onde (WDM).
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References
Vareille (G.),Julien (B.),Pitel (F.),Marcerou (J.-F.), 365×11.6 Gbit/s transmission experiment over 6850km using 22.2 GHz channel spacing inNRZ format,ECOC01 proceedings,pdl Paper M1.7, Amsterdam, Sept–Oct (2001)
Foursa (D.G.),Davidson (C.R.),Nissov (M.),Mills (M.A.),Xu (L.),Cai (J.X.),Pilipetskii (A.N.),Cai (Y.),Breverman (C.),Cordell (R.R.),Carvelli (T.J.),Corbett (P.C.),Kidorf (H.D.),Bergano (N.S.), 256×10 Gbit/s transmission over 11000 km using hybrid Raman/edfa with 80 nm of continuous bandwidth,OFC 02 proceedings,pdl PaperFC3, Anaheim, 17–22 March (2002)
Shimojoh (N.),Naito (T.),Tanaka (T.),Nakamoto (H.),Ueki (T.),Sugiyama (A.),Torii (K.),Suyama (M.), 2.4 Tbit/sWDM transmission over 7400 km using all Raman amplifier repeaters with 74 nm continuous single band,ECOC01 proceedings,pdl Paper M1.4, Amsterdam, Sept–Oct (2001)
Miller (D.A.), Dynamic nonlinear optics in semiconductors: physics and applications,Laser Focus, no July (1983)
Weiner (J.S.), Pearson (D.B.), Miller (D.A.B.), Chemla (D.S.), Sivco (D.), Cho (A.Y.), Nonlinear spectroscopy of InGaAs/InAlAs multiple quantum well structures,Appl. Phys. Lett. 49, pp. 531–533, (1986)
Benjamin (S.D.), Loka (H.S.), Othonos (A.) andSmith (P.W.E.), Ultrafast dynamics of nonlinear absorption in low-temperature-grown GaAs,Appl. Phys. Lett. 68, pp.2544–2546, (1996)
Söderström (D.), Marcinkevicius (S), Karlsson (S), Lourdudoss (S), Carrier trapping due to Fe3+/Fe2+ in epitaxial InP,Appl. Phys. Lett. 70, pp.3374–3376, (1997)
Sosnowski (T.S),Norris (T. B.),Wang (H. H.),Grenier (P.),Whitaker (J. F.),Sung (C. Y.), High-carrier-density electron dynamics in low-temperature-grown GaAs,Appl. Phys. Lett., pp.3245–3247, (1997)
Juodawlkis (P.W.),Ralph (S. E.), Hole-induced transient bandgap renormalization: A mechanism for photo-induced absorption in defect-engineered semiconductors,Appl. Phys. Lett., pp.1722–1724, (2000)
Marceaux (A.), Loualiche (S.), Dehaese (O.), andLambert (B.), High-speed 1.55 µm Fe-doped multiple-quantum-well saturable absorber on InP,Appl. Phys. Lett. 78, pp.4065–4067, (2001)
Prabhu (S. S), Ralph (S.E.), Melloch (M. R.), Harmon (E.S.), Carrier dynamics of low-temperature-grown GaAs observed via THz spectroscopy,Appl. Phys. Lett. 70, pp.2419–2421, (1997)
Künzel (H.), Böttcher (J.), Gibis (R.), Urmann (G.), Materials properties of GaInAs grown on InP by low-temperature molecular beam epitaxy,Appl. Phys. Lett. 61, pp.1347–1349, (1992)
Takahashi (R.), Kawamura (Y.), Kagawa (T.) andIwamura (H.), Ultrafast 1.55µm photoresponses in low=temperature-grown InGaAs/InAlAs quantum wells,Appl. Phys. Lett. 65, pp.1790–1792, (1994)
Takahashi (R.), Choi (W.Y), Kawamura (Y.), Iwamura (H.), Femtosecond all-optical and gates based on low-temperature grown Be-doped strained InGaAs/InAlAs multiple quantum well,Proc. 8th annual meeting of Lasers and Electro-Optics Society,1, pp.343–344, (1995)
Zhuravlev (A.B.), Marushchak (V.A.), Portnoî (E.L.), Stelmakh (N.), Tiktov (A.N.), Lifetime of none-quilibrium carriers in p-type GaAs irradiated with oxygen ions,Sov. Phys. Semicond.,22, pp.217–218, (1988)
Mangeney (J.), Choumane (H.), Patriarche (G.), Leroux (G.), Aubin (G.), Harmand (J.C), Oudar (J.L), Bernas (H.), Comparison of light and heavy-ion-irradiated quantum-wells for use as ultrafast satuable absorbers,Appl. Phys. Lett. 79, pp.2722–2724, (2001)
Lugagne Delpon (E.), Oudar (J.L), Bouché (N.), Raj (R.), Shen (A.), Stelmakh (N.), Lourtioz (J.M.), Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells,Appl. Phys. Lett. 72, pp.759–761, (1998)
Mangeney (J.), Oudar (J.L), Harmand (J.C.), Patriarche (G.), Aubin (G.), Stelmakh (N.), Lourtioz (J.M.), Ultrafast saturable absorption at 1.55 µm in heavy-ion-irradiated quantum-well vertical cavity,Appl. Phys. Lett. 76, pp.1371–1373, (2000)
Salaun (S.),Le Corre (A.),Gauneau (M.),Lecrosnier (D.), Semi-insulating InP:Fe bygsmbe: optimal growth conditions,International Conference on InP and related Compounds, Paris, Proc.IEEE no 93CH3276-3, p.147 (1993)
Bernstein (L.),Journal of the Electrochemical Society 12 1282 (1966)
Lee (C. C.), Wang (C. Y.), Matijasevic (G.),IEEE Transaction on Components, Hybrids and Manufacturing Technology 16 311 (1993)
Choumane (H.), Etude de dispositifs tout-optiques à absorbants saturables ultra-rapides pour applications aux transmissions optiques à très haut débit, Thesis of the University of Paris XI (Orsay, Nov. 2002)
Mangeney (J.), Aubin (G.), Oudar (J. L.), Harmand (J. C.), Patriarche (G.), Choumane (H.), Stelmakh (N.), Lourtioz (J. M.), All-optical discrimination at 1.5 µm using ultrafast saturable absorber vertical cavity device,Electronics Letters 36 1486 (2000)
Choumane (H.),Aubin (G.),Oudar (J. L.),Nelep (C.),Rouvillain (D.),Brindel (P.),Leclerc (O.), Passive all-optical 1.55 µm saturable absorber for 40 Gbit/s signal processing,International Workshop on Optical Signal Processing,com, Technical University of Denmark, 29–30 Nov. (2001)
Rouvillain (D.),Seguineau (F.),Pierre (L.),Brindel (P.),Choumane (H.),Aubin (G.),Oudar (J-L.),Leclerc (O.), 40 Gbit/s Optical 2R Regenerator based on passive Saturable Absorber for WDM long-haul transmissions,OFC’2002, PDPaper FD11, Anaheim, 17–22 March (2002)
Shen (A.),Goix (M.),Louis (S.),Delagrandière (D.),Decobert (J.),Hénin (G.),Rouvillain (D.),Leclerc (O.),Choumane (H.),Aubin (G.),Oudar (J-L.), 4-channel Saturable Absorber Module for high bit-rate regeneratedWDM transmission,Proc of ECOC02, Copenhagen Sept (2002).
Haus (H.A.), Silberberg (Y.), Theory of mode locking of a laser diode with a multiple-quantum-well structure,J.Opt. Soc.Am. B,2, no7, pp1237–1243 (1985)
Katner (F.X.), Jung (I.D.), Keller (U.), Soliton mode-locking with saturable absorbers,IEEEJ. of Selected Topics in Q. Elec.,2, no 3, p. 540–556 (1996)
Bakonyi (Z.), Onishchukov (G.), Knöll (C.), Gölles (M.), Lederer (F.), Ludwig (R.), In-line saturable absorber in transmission systems with cascaded semiconductor optical amplifiers,IEEE Photonic Techn. Lett.,12, no5, pp. 570–572 (2000)
Knox (F.M.), Harper (P.), Kean (P.N), Doran (N.J.), Bennion (I.), Low jitter long distance pulse transmission near net fiber dispersion zero wavelength,Electronics Letters,31, no17, pp1467–1468 (1995)
Govan (D.S.), Smith (N.J.), Knox (F.M.), Doran (N.J.), Stable propagation of solitons of increased energy through the combined action of dispersion management and periodic saturable absorption,J. Opt. Soc. Am. B,14, n.11, pp2960–2963 (1997)
Harper (P.),Penketh (I.S.),Allleston (S.),Doran (N.J.), 200,000km, 10 Gbit/s soliton propagation exploiting periodic saturable absorption,Proc. of ECOC’98, Madrid, Sep 20–24 p107 (1998)
Doran (N.J.), Wood (D.), Nonlinear optical loop mirror,Optics Letters,13, n.1, pp. 5658 (1988)
Fermann (M.E.), Haberl (F.), Hofer (M.), Hochreiter (H.), Nonlinear amplifying loop mirror,Optics Letters,15, no13, pp752–754 (1990)
Hirano (A.), Tsuda (H.), Hagimoto (K.), Takahashi (R.), Kawamura (Y.), Iwamura (H.), 10 ps pulse all-optical discrimination using a high speed saturable absorber gate,Electronics Letters,31, n.9, pp. 736–737 (1995)
Hirano (A.), Kobayashi (H.), Tsuda (H.), Takahashi (R.), Asobe (M.), Sato (K.), Hagimoto (K.), 10 Gbit/s RZ discrimination using refined saturable absorber optical gate,Electronics Letters,34, n.2, pp198–199 (1998)
Kurita (H.),Hashimoto (Y.),Ogura (I.),Yamada (H.),Yokoyama (H.), All-optical 3R regeneration based on optical clock recovery with mode-locked LDs,ECOC’99, Post Deadline paper PD 3–6, Nice, 26–30 Sept (1999)
Bakonyi (Z.), Onisshchukov (G.), Knöll (C.), Gölles (M.), Lederer (F.), 10 Gbit/sRZ transmission over 5000 km with gain-clamped semiconductor optical amplifiers and saturable absorbers,Electronics Letters,36, no21, p.1790 (2000)
Agrawal (G.P.), Olsson (N.A.), Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers,IEEE J. Quantum Electron.,25, 2297 (1989)
Chen (C.-J.), Wai (P. K. A.), Menyuk (C. R.), Soliton fiber ring laser,Opt. Lett.,17, pp. 417–419, (1992)
Audouin (O.), Pallise (E.), Desurvire (E.), Maunand (E.), Use of in-line saturable absorbers inWDM soliton systems,IEEE Photonics Technology Letters,10, pp. 828–829 (1998)
Atkinson (D.), Loh (W.H.), Afanasjev (V.V.), Grudinin (A.B.), Seeds (A.J.), Payne (D.N.), Increased amplifier spacing in soliton system with quantum-well saturable absorbers and spectral filtering,Optics Letters,19, no19, pp1514, 1516 (1994)
Matsumoto (M.), Ikeda (H.), Uda (T.), Hasegawa (A.), Stable soliton transmission in the system with non-linear gain,Joun of Light. Tech.,13, no4, pp658–665 (1995)
Bennett (S.), Seeds (A.J.), Error-free 80 Gbit/s soliton transmission over transoceanic (>8000km) distance using fast saturable absorbers and dispersion decreasing fibers,Proc OFC’99, San Diego 22–26 Feb,2, pp50–52 (1999)
Leclerc (O.), Aubin (G.), Brindel (P.), Mangeney (J.), Choumane (H.), Barré (S.), Oudar (J-.L.), Demonstration of high robustness toSNR impairment in 20 Gbit/s long-haul transmission using 1.5 µm saturable absorber,Electronics Letters,36, no23, pp.1944 (2000)
Matsumoto (M.), Leclerc (O.), Analysis of a 2R optical regenerator utilizing self-phase modulation in a highly nonlinear fiber,Electronics Letters,38, no12, p.576 (2002)
Akiyama (T.),Kuwatsuka (H.),Simoyama (T.),Nakata (Y.),Mukai (K.),Suguwara (M.),Wada (O.),Ishikawa (H.),WDM multi-channel nonlinear device utilizing inhomogeneously-broadened gain of self-assembled quantum dots,Proc. of ECOC’00, Paper 9.3.6, p. 291 Munich 1–5 Sep. (2000).
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Oudar, J.L., Aubin, G., Mangeney, J. et al. Ultra-fast quantum-well saturable absorber devices and their application to all-optical regeneration of telecommunication optical signals. Ann. Télécommun. 58, 1667–1707 (2003). https://doi.org/10.1007/BF03001222
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DOI: https://doi.org/10.1007/BF03001222
Key words
- Optical telecommunication
- Regeneration
- Saturable absorber
- Quantum well
- Semiconductor device
- Crystal defect
- Doping
- Cavity
- Microelectronic fabrication
- Characterization
- Optical component
- Modeling
- Experimentation