A study on the thermal behavior in microaccelerometer manufacturing processes

Abstract

Single crystal silicon (SCS) is used in a variety of microsensor applications in which stresses and other mechanical effects may dominate device performance. One of major problems associated with the manufacturing processes of the microaccelerometer based on the tunneling current concept is temperature gradient and thermal stressess. This paper deals with finite element analyses of residual stresses causing popping up, which are induced in micromachining processes of a microaccelerometer. The authors model temperature-dependent mechanical properties during focused ion beam (FIB) cutting and Pt deposition processes. The maximum thermal strain of 0.0012 occurred at the readout gap of the microaccelerometer during the Pt deposition process. The stress produced during the heating process of FIB cut was also found to be about 33–36 MPa and cooling process the maximum equivalent stress of about 34MPa still at the right corner of readout gap. The calculated maximum displacement occurred at the readout gap was 0.14 μm. This is still smaller than the popping up of about 2 μm observed in the experiment. The reason for this popping up phenomenon in munufacturing processes of microaccelerometer may be the bending of the whole wafer or it may come from the way the underetch occurs. Different SOI material and a new geometry of the accelerometer are under investigation. We want to seek after the real cause of this pop up phenomenon and diminish this by changing munufacturing processes of microaccelerometer.