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Nanoindentation Characterization of Single-Crystal Silicon with Oxide Film

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Abstract

In order to obtain ultra-smooth surfaces of single-crystal silicon in ultra-precision machining, an intensive study of the deformation mechanism, mechanical properties, and the effect of oxide film under load is required. The mechanical properties of single-crystal silicon and the phase transition after nanoindentation experiments are investigated by nanoindentation and Raman spectroscopy, respectively. The results show that the pop-in event occurring in the theoretical elastic region of single-crystal silicon is caused by the stress concentration at the interface between the oxide film and the substrate. This causes the single-crystal silicon to be converted from the elastic deformation zone to the plastic deformation zone. And at this time, the elastic domain area is almost negligible, which seriously affects the machinability of single-crystal silicon for ultra-precision processing. In addition, the experimental data of single-crystal silicon under ultra-low load deviates greatly relative to the real value and fluctuates widely. However, when the nanoindentation experiment enters the fully plastic deformation zone of single-crystal silicon, the test results of its mechanical properties will be more accurate.

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Acknowledgements

The authors appreciate the financial support of National Natural Science Foundation of China (NSFC) (51835013, 51991371).

Funding

National Natural Science Foundation of China (NSFC) (51835013, 51991371).

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Authors and Affiliations

  1. Laboratory of Science and Technology on Integrated Logistics Support, College of Intelligence Science and Technology, National University of Defense Technology, Changsha, 410073, China

    Lianmin Yin, Yifan Dai & Hao Hu

  2. Hu’nan Key Laboratory of Ultra-precision Machining Technology, Changsha, 410073, China

    Lianmin Yin, Yifan Dai & Hao Hu

Authors
  1. Lianmin Yin
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  2. Yifan Dai
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  3. Hao Hu
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Correspondence to Lianmin Yin or Hao Hu.

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Yin, L., Dai, Y. & Hu, H. Nanoindentation Characterization of Single-Crystal Silicon with Oxide Film. Silicon 14, 5173–5178 (2022). https://doi.org/10.1007/s12633-021-01297-9

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  • DOI: https://doi.org/10.1007/s12633-021-01297-9

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