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A note on the inductive properties of filamentary transistors

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Applied Scientific Research, Section B

Summary

The input impedance of filamentary transistors is analyzed. A simple perturbation method leads to the distribution of injected carriers in the filament, which then is utilized to calculate the filament conductance as a function of emitter current. From the results of the analysis an equivalent circuit is obtained and the inductive effects are easily explained. The analysis is only valid for emitter currents so small that the number of injected minority carriers is much smaller than the number of majority carriers in equilibrium. At low frequencies it is possible to obtain sharp resonances but at high frequencies the sharpness of the resonance is lost due to the disappearance of the negative dynamic resistance.

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References

  1. Haynes, J. R. and W. Shockley, Phys. Rev.75 (1949) 691.

    Article  ADS  Google Scholar 

  2. Shockley, W., G. L. Pearson and J. R. Haynes, B.S.T.J.28 (1949) 335.

    Google Scholar 

  3. Lesk, I. A. and V. P. Mathis, Conv. Rec. of the IRE Part 6 (1953) 2.

    Google Scholar 

  4. Suran, J. J., IRE Trans. on Electron Devices ED-2 (1955) 29.

    Google Scholar 

  5. Suran, J. J., IRE Trans. on Electron Devices ED-4 (1957) 34.

    Article  ADS  Google Scholar 

  6. Scharfetter, D. L. and A. G. Jordan, Bull. Am. Phys. Soc. Ser. II6 (1961) 437.

    Google Scholar 

  7. Scharfetter, D. L. and A. G. Jordan, IRE Trans. on Electron Devices ED-9. (1962) 461.

    Article  ADS  Google Scholar 

  8. Dill, H. G., IRE Trans. on Military Electronics, MIL-5 (1961) 239.

    Article  Google Scholar 

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Authors and Affiliations

  1. Carnegie Institute of Technology, Pittsburgh, Pennsylvania, U.S.A.

    A. G. Jordan

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  1. A. G. Jordan
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Jordan, A.G. A note on the inductive properties of filamentary transistors. Appl. Sci. Res. 10, 129–136 (1962). https://doi.org/10.1007/BF02928069

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  • DOI: https://doi.org/10.1007/BF02928069

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