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Transient transport of electrons in thin film electroluminescent devices

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Abstract

Transient transport of electrons in ZnS-type thin film electroluminescent devices is studied with Monte Carlo method. The variation rule of electrons' average kinetic energy, average drift velocity and intervalley transfer process are obtained. The transient time and drift length before the balance of acceleration and scattering are about 200 fs and 30–40 nm, respectively. Field emission process of electrons trapped at interface states only affects the transient process of electron transport and makes no influence on the steady state. The new explanations about the “dead layer” phenomenon and the overshoot in the average drift velocity are proposed based on the calculation results.

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Authors and Affiliations

  1. Institute of Optoelectronic Technology, Northern Jiaotong University, 100044, Beijing, China

    Hui Zhao, Yongsheng Wang, Zheng Xu & Xurong Xu

Authors
  1. Hui Zhao
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  2. Yongsheng Wang
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  3. Zheng Xu
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  4. Xurong Xu
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Project supported by the National High-Tech Program and the Doctoral Point Foundation of China.

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Zhao, H., Wang, Y., Xu, Z. et al. Transient transport of electrons in thin film electroluminescent devices. Sci. China Ser. E-Technol. Sci. 42, 282–287 (1999). https://doi.org/10.1007/BF02916774

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  • DOI: https://doi.org/10.1007/BF02916774

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