Abstract
Schottky barrier diodes with near-ideal characteristics have been fabricated on amorphous hydrogenated silicon prepared by decomposition of a mixture of 10% silane and 90% hydrogen. The interface properties are found to be stable up to heat treatment of 300°C. From a detailed investigation of dark and photovoltaic properties it is concluded that the density of states in the mobility gap is sufficiently small so that there is no significant carrier recombination in the space charge region.
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Pietruszko, S., Narasimhan, K.L. & Guha, S. Investigation on schottky diodes on amorphous hydrogenated silicon. Bull. Mater. Sci. 3, 157–161 (1981). https://doi.org/10.1007/BF02908490
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DOI: https://doi.org/10.1007/BF02908490