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Superficial trapping levels in anthracene crystals

  • Published:
Il Nuovo Cimento B (1971-1996)

Summary

The emptying kinetics of superficial trapping levels in anthracene crystals has been studied by pulsed-photocurrent transients. The temperature and the initial filling of the levels have displayed great influence. A theoretical model in agreement with the experimental results has been developed.

Riassunto

La cinetica di svuotamento dei livelli superficiali di intrappolamento in cristalli di antracene è stata studiata per mezzo di segnali di fotocorrente pulsata. È stata messa in evidenza una forte dipendenza dalla temperatura e dalle condizioni iniziali di riempimento dei livelli. È stato sviluppato un modello cinetico in buon accordo con i risultati sperimentali.

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Authors and Affiliations

  1. Istituto di Fisica dell’ Università, Modena, Italia

    G. Casalini, T. Corazzari & T. Garofano

Authors
  1. G. Casalini
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  2. T. Corazzari
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  3. T. Garofano
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Casalini, G., Corazzari, T. & Garofano, T. Superficial trapping levels in anthracene crystals. Nuovo Cim 45, 229–238 (1978). https://doi.org/10.1007/BF02894682

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  • DOI: https://doi.org/10.1007/BF02894682

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