Abstract
The effect of the excess hole capture efficiency on carrier accumulation with increasing photoexcitation in quantum wells of the n-AlGaAs/GaAs heterostructures is investigated. The oscillatory character of the dependence of the ratio between the intensities of photoluminescence from the quantum well and barrier layers on the well width is demonstrated. The hole capture times in the oscillation maximum and minimum are estimated as 3 and 370 ps. The shift of the energy transition in a resonant well under strong excitation is attributed to the charge buildup effect caused by the difference between the electron and hole capture rates.
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Kochiev, M.V., Tsvetkov, V.A., and Sibel’din, N.N., Kinetics of accumulation of excess holes under photoexcitation and their relaxation in GaAs/AlGaAs shallow quantum wells, JETP Lett., 2015, vol. 101, no. 3, pp. 183–188.
Yaremenko, N.G., Karachevtseva, M.V., and Strakhov, V.A., Resonance capture of holes in modulationdoped n-AlGaAs/GaAs quantum well structures, Dokl. Phys., 2011, vol. 56, no. 3, pp. 150–154.
Blom, P.W.M., Smit, C., Havercot, J.E.M., and Wolter, J.H., Carrier capture into a semiconductor quantum wells, Phys. Rev. B, 1993, vol. 47, no. 4, pp. 2072–2081.
Kozyrev, S.V. and Shik, A.Ya., Capture of carrier by quantum wells in heterostructures, Sov. Phys. Semicond., 1985, vol. 19, no. 9, p. 1024.
Brum, J.A. and Bastard, G., Resonant carrier capture by semiconductor quantum wells, Phys. Rev. B, 1986, vol. 33, no. 2, pp. 1420–1423.
Mishima, T., Kasai, J., Morioka, M., et al., Determination of band-gap discontinuity in AlGaAs/GaAs sistem by quantum oscillations of photoluminescence intensity, Surf. Sci., 1986, vol. 174, pp. 307–311.
Fujiwara, A., Fukatsu, S., Shiraki, Y., and Ito, R., Observation of resonant electron capture in AlGaAs/GaAs quantum well structures, Surf. Sci., 1992, vol. 263, pp. 642–645.
Morris, D., Deveaud, B., Regreny, A., and Auvray, P., Electron and hole capture in multiple-quantum well structures, Phys. Rev. B, 1993, vol. 47, no. 11, pp. 6819–6822.
Barros, M.R.X., Becker, P.C., Morris, D., and Deveaud, B., Ultrafast optical evidence for resonant electron capture in quantum wells, Phys. Rev. B, 1993, vol. 47, np. 16, pp. 10951–10954.
Kozyrev, S.V. and Shik, A.Ya., Capture and recombination of nonequilibrium carriers in quantum well structure, Sov. Phys. Semicond., 1988, vol. 22, no. 1, pp. 64–67.
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Original Russian Text © N.G. Yaremenko, V.A. Strakhov, M.V. Karachevtseva, Yu.V. Fedorov, 2016, published in Izvestiya Vysshikh Uchebnykh Zavedenii, Elektronika, 2016, Vol. 21, No. 4, pp. 301–308.
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Yaremenko, N.G., Strakhov, V.A., Karachevtseva, M.V. et al. Dynamics of the Accumulation of Excess Holes in n-AlGaAs/GaAs Heterostructure Quantum Wells. Russ Microelectron 46, 449–453 (2017). https://doi.org/10.1134/S1063739717070150
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DOI: https://doi.org/10.1134/S1063739717070150