Two-dimension numerical simulation of submicron-scale GaAs mesfet

Abstract

This paper deals with 2-D simulation of GaAs MESFET, which includes velocity overshoot effects by using energy transport model suitable for submicron devices. Computation time is greatly reduced by simplifying the model and using fast convergence algorithms, e.g. Gummel interaction and ICCG method. The program shows good stability and convergence. Several types of GaAs MESFET structures, e.g., epitaxial ion-implanted and buriedP-layer, have been simulated. The results show that buriedP-layer can decrease carrier’s injections into substrate and improve device performance. The results are also used to study carefully the velocity overshoot effects. By comparison of results of energy transport model and drift-diffusion model, the limitation of drift-diffusion-model is derived.