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Influence of low energy ballistic electron on the transmittance properties of Au/Si interface studied by ballistic-electron-emission microscope

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Chinese Science Bulletin

Conclusions

The electronic properties of Au/Si interface are investigated with a homemade ballistic-electron-emission microscope. The spatial distribution of Schottky barrier height is detected. Irreversible changes of ballistic transmittance of local interface with typical size of a few hundred of angstroms in diameter are observed by raising the tip voltage temporarily. Ballistic-electron-emission spectroscopy indicates that the electron transmission probabilities are reduced significantly inside the modified region, which is attributed to the Au-Si intermixing and other chemical reactions occurring at the interfacial layer stimulated by the injected energetic hot electrons.

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Authors and Affiliations

  1. Institute of Chemistry, Chinese Academy of Sciences, 100080, Beijing, China

    Xiaohui Qiu, Guangyi Shang, Chen Wang, Naixin Wang & Chunli Bai

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  1. Xiaohui Qiu
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  2. Guangyi Shang
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  3. Chen Wang
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  4. Naixin Wang
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  5. Chunli Bai
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Qiu, X., Shang, G., Wang, C. et al. Influence of low energy ballistic electron on the transmittance properties of Au/Si interface studied by ballistic-electron-emission microscope. Chin.Sci.Bull. 42, 1282–1286 (1997). https://doi.org/10.1007/BF02882760

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  • DOI: https://doi.org/10.1007/BF02882760

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