Abstract
The electrical resistance in zero magnetic field and magnetoresistance in different external magnetic fields have been measured in a temperature range of 77—300 K. It is found that the temperature dependence of magnetoresistance can be well described by a phenomenofogical formula of
where the fitting parameters α, β vary as the external magnetic fieldH changes,E 0 is the activation energy,E 0/k B = 1160 K,M s is the saturation magnetization, the temperature and magnetic field dependence ofM/M s is obtained by the mean-field expression.
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Project supported by the National Natural Science Foundation of China and partly by the Chinese Academy of Sciences.
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Li, X., Li, K., Du, J. et al. A phenomenological description of temperature dependence of magnetoresistance in La2/3Ca1/3MnO3-δ thin films. Sci. China Ser. A-Math. 41, 308–312 (1998). https://doi.org/10.1007/BF02879050
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DOI: https://doi.org/10.1007/BF02879050